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  • Electrical Engineering Archive: Questions from 2023-01-17

    The maximum drain current for an n-channel enhancement-type MOSFET is 30 mA. Determine VGS at this current level if k = 0.06×10−3 A/V2

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    Solve for the drain current ID for the MOSFET in Fig. (1). Assume that the transistors have |VTh| = 1 V and exhibit |ID(sat)| = 2 mA when |VGS| = 3 V Solve for the drain current ID for the MOSFET in Fig. (2). Assume that the transistors have |VTh| = 1 V and exhibit |ID(sat)| = 2 mA when |VGS| = 3 V NOTE!!: You can check your answers for problems 1 and 2 using KVL. The positive current ID direction for NMOS/PMOS devices is indicated by the arrow direction on the transistor's source terminal. The VGS=|3 V| and |ID(sat)| = 2 mA given above are NOT the transistor operating voltage/current when it is connected to the four resistor circuits in Fig. (1) and Fig. (2).

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    Design a MOSFET circuit to have ID = 0.5 mA. unCox(W/L) = 1 mA/V2, neglect channel-length modulation, Vt = 1 V, and VDD = 15 V. Find the % of ID (0.45 mA, ?Id = -0.045 mA -> 9% ) change when Vt = 1.5 V. Find rDS -> infinity

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