In the circuit shown below the n-channel enhancement-type mosfet has a threshold voltage Vt = 1V and unCox W / 2L = 1mA /V^2. The channel-length modulation effect and the body effect can be ignored. Determine: a. (10 pts) the value of RD that will produce a dc drain-to-source voltage VDS = VOV + 2V. b. (5 pts) if RD = 25kohm, Rs = 0, and assuming saturation-region operation, the voltage gain Av = vOUT/vIN. c. (5 pts) if RD = 25kohm, Rs = 1kohm, and assuming saturation-region operation, the voltage gain Av = vOUT/vIN.
Design (find RD, RS, R1, R2) a generic bias circuit for the amplifier shown below to establish a drain current ID=4 mA operating in the saturation region. The transistor has a kn= 2 mA/V^2 and a threshold voltage Vt = 1 V. For the DC design you may assume the channel length modulation is negligible).
An n-channel MOSFET with kn = 50×10−6 , W = 10 μm, L = 1 μm, and VT = 1 V, is biased with vGS = 3 V and vDS = 5 V. a. Compute the drain current iD b. Compute the transconductance gm c. Compute the output conductance go if V DS = 2 V d. Compute the output conductance go if VDS = 0 V An enhancement-type p - channel MOSFET with kp = 10×10−6 , W = 10 μm, L = 1 μm, and vT = −2 V, is biased with vG = 0 V and vS = 5 V. What is the highest voltage of vD that will keep the device in saturation?
The n-channel MOSFETs in the following circuits exhibits a threshold voltage Vt = 1V and unCox(W/L) = 2mA/V^2. The p-channel MOSFETs have threshold voltage Vt = -1V and upCox(W/L) = 1mA/V^2. Assume R1 = R2 = Rsig = 10kohm. Find: 1. The voltage gain Ava = v2 /v1 and input resistance Ria for circuit (a). 2. The voltage gain Avb = v4 /v3 and output resistance Rob for circuit (b). 3. The overall voltage gain Av = v4 /vsig that should be obtain if va is connected to v1 and v2 is connected to v3.