In the following circuits (Figs. 1 and 2), assume that all devices have |VTh|= 2V and exhibit |ID(sat)|= 2mA when |VGS |= 3V. 1. Solve for the drain current IDfor the MOSFET in Fig. (1) 2. Solve for the drain current IDfor the MOSFET in Fig. (2) NOTE!!: You can check your answers for problems 1 and 2 using KVL. The positive current ID direction for NMOS/PMOS devices is indicated by the arrow direction on the transistor
In the following circuits (Figs. 3 and 4), assume that |VTh|= 1Vand |ID(sat)|= 1mA when |VGS |= 3V. For problems 3a, 3b, 4a, and 4b, the transistors MUST have a drain current of 3mA (|ID|= 3mA). 3a. Design Fig. 3 circuit (i.e., Compute appropriate resistor values based on the drain current and supply values). 3b. For Fig. 3 circuit, if R1= 10 kohm, RSS = 500 ohm, and the transistor is known to be operating in the saturation region, what is the value of R2? 4a. Design Fig. 4 circuit (i.e., Compute appropriate resistor values based on the drain current and supply values). 4b. For Fig. 4 circuit, if RSS = 500 ohm, what is the largest RD value that will allow the transistor to still operate in the saturation regime?