The PMOS transistor in the circuit of Fig. P5.49 has V1 = -0.5 V, μpCox = 100 μA/V^2, L = 0.18 μm, and λ = 0. Find the values required for W and R in order to establish a drain current of 180 μA and a voltage VD of 1 V.
The NMOS transistors in the circuit of Fig. P5.50 have Vt = 0.5 V, μnCox = 250 μA/V^2, λ = 0, and L1, L2 = 0.25 μm. Find the required values of gate width for each of Q1 and Q2, and the value of R, to obtain the voltage and current values indicated.
The NMOS transistors in the circuit of Fig. P5.51 have Vt = 0.5 V, μnCox = 90 μA/V2, λ = 0, and L1 = L2 = L3 = 0.5 μm. Find the required values of gate width for each of Q1, Q2, and Q3 to obtain the voltage and current values indicated.
Consider the circuit of Fig. 5.24(a). In Example 5.5 it was found that when Vt = 1 V and k’n(W/L) = 1 mA/V2 , the drain current is 0.5 mA and the drain voltage is +7 V. If the transistor is replaced with another having Vt = 1.5 V with k’n(W/L) = 1.5 mA/V2 , find the new values of ID and VD. Comment on how tolerant (or intolerant) the circuit is to changes in device parameters.
Using a PMOS transistor with Vt = −1.5 V, k’p (W/L) = 4 mA/V2 , and λ = 0, design a circuit that resembles that in Fig. 5.24(a). Using a 10-V supply, design for a gate voltage of +6 V, a drain current of 0.5 mA, and a drain voltage of +5 V. Find the values of RS and RD. Also, find the values of the resistances in the voltage divider feeding the gate, assuming a 1-μA current in the divider.
5.54 The MOSFET in Fig. P5.54 has Vt = 0.4 V, kn′ = 500 μA/V2, and λ = 0. Find the required values of W/L and of R so that when vI = VDD = +1.3 V, rDS = 50 Ω, and vO = 50 mV
In the circuits shown in Fig. P5.55, transistors are characterized by |Vt| = 1 V, k’W/L = 4 mA/V2 , and λ = 0. (a) Find the labelled voltages V1 through V7. (b) In each of the circuits, replace the current source with a resistor. Select the resistor value to yield a current as close to that of the current source as possible, while using resistors specified in the 1% table provided in Appendix J.
For each of the circuits in Fig. P5.56, find the labeled node voltages. For all transistors, k’n(W/L) = 0.5 mA/V2 , Vt = 0.8 V, and λ = 0.
For each of the circuits shown in Fig. P5.57, find the labeled node voltages. The NMOS transistors have Vt = 0.9 V and k’n(W/L) = 1.5 mA/V2 .
For the circuit in Fig. P5.58: (a) Show that for the PMOS transistor to operate in saturation, the following condition must be satisfied: IR < |Vtp| (b) If the transistor is specified to have |Vtp| = 1 V and kp = 0.2 mA/V2, and for I = 0.1 mA, find the voltages VSD and VSG for R = 0, 10 kΩ, 30 kΩ, and 100 kΩ.