For the circuits in Fig. P5.59, μnCox = 3μpCox = 270 μA/V2 , |Vt| = 0.5 V, λ = 0, L = 1 μm, and W = 3 μm, unless otherwise specified. Find the labeled currents and voltages.
For the devices in the circuit of Fig. P5.60, |Vt| = 1 V, λ = 0, μnCox = 50 μA/V2 , L = 1 μm, and W = 10 μm. Find V2 and I2. How do these values change if Q3 and Q4 are made to have W = 100 μm?
In the circuit of Fig. P5.61, transistors Q1 and Q2 have Vt = 0.7 V, and the process transconductance parameter k’n = 125 μA/V2. Find V1, V2, and V3 for each of the following cases: (a) (W/L)1 = (W/L)2 = 20 (b) (W/L)1 = 1.5(W/L)2 = 20
In a particular application, an n-channel MOSFET operates with VSB in the range 0 V to 4 V. If Vt0 is nominally 1.0 V, find the range of Vt that results if γ = 0.5 V1/2 and 2φf = 0.6 V. If the gate oxide thickness is increased by a factor of 4, what does the threshold voltage become?
A p-channel transistor operates in saturation with its source voltage 3 V lower than its substrate. For γ = 0.5 V1/2, 2φf = 0.75 V, and Vt0 = −0.7 V, find Vt.
In the above PMOS inverter circuit VDD = 5 V and RD = 20kohm For p-channel MOSFET conduction parameter Kp = 0.3 mA/V2 and threshold voltage VTP = -0.5 V. If the input voltage vI = 5 V. Find the output voltage vO in V. Find the drain current iD in mA.
In the above circuit VDD = 5V and for n-channel MOSFET threshold voltage VTN = 1V, conduction parameter Kn = 10 μA/V2. If the transition input voltage is vI = 2V, find out the value of RD in kΩ?
In the above NMOS NOR gate circuit RD = 1kohm and for both n-channel MOSFETs conduction parameter Kn = 2mA/V2, threshold voltage VTN = 0.5 V. Remember that voltage swing for both inputs V1, V2 are in between 0 V to 2.5 V. Find the maximum power dissipation in mW. In this case, find the output voltage VO in V.