A depletion-type n-channel MOSFET with k’nW/L = 2 mA/V2 and Vt = −3 V has its source and gate grounded. Find the region of operation and the drain current for vD = 0.1 V, 1 V, 3 V, and 5 V. Neglect the channel-length-modulation effect.
For a particular depletion-mode NMOS device, Vt = −2 V, k’nW/L = 200 μA/V2 , and λ = 0.02 V−1 . When operated at vGS = 0, what is the drain current that flows for vDS = 1 V, 2 V, 3 V, and 10 V? What does each of these currents become if the device width is doubled with L the same? With L also doubled?
Neglecting the channel-length-modulation effect, show that for the depletion-type NMOS transistor of Fig. P5.67, the i−v relationship is given by i = 1/2 k’n(W/L)(v2 −2Vtv) for v ≥ Vt i = −1/2 k’n(W/L)V2t for v ≤ Vt (Recall that Vt is negative.) Sketch the i−v relationship for the case: Vt = −2 V and k’n(W/L) = 2 mA/V2 .
Design the circuit of Fig. P5.44 to establish a drain current of 0.1 mA and a drain voltage of +0.3 V. The MOSFET has Vt = 0.5 V, μnCox = 400 μA/V2, L = 0.4 μm, and W = 5 μm. Specify the required values for RS and RD
The NMOS transistor in the circuit of Fig. P5.44 has Vt = 0.4 V and kn = 4 mA/V2. The voltages at the source and the drain are measured and found to be -0.6 V and +0.2 V, respectively. What current ID is flowing, and what must the values of RD and RS be? What is the largest value for RD for which ID remains unchanged from the value found?
For the circuit in Fig. E5.10, assume that Q1 and Q2 are matched except for having different widths, W1 and W2. Let Vt = 0.5 V, k’n = 0.4 mA/V2, L1 = L2 = 0.36 μm, W1 = 1.44 μm, and λ = 0. (a) Find the value of R required to establish a current of 50 μA in Q1. (b) Find W2 andR2 so thatQ2 operates at the edge of saturation with a current of 0.5 mA Figure E5.10