Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 2.5upCox = 470 uA/V2 . In addition, QN and QP have L = 65 nm and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH , VOL, VIH , VIL, NML, and NMH . (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.
Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5upCox = 115 uA/V2. In addition, QN and QP have L = 0.25 ?m, and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD / 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL, VIH, VIL, NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.
Consider MOS transistors fabricated in a 65-nm process for which unCox = 470 uA/V2, upCox = 190 uA/V2, Vtn = -Vtp = 0.35 V, and VDD = 1 V. (a) Find Ron of an NMOS transistor with W/L= 1.5. (b) Find Ron of a PMOS transistor with W/L= 1.5. (c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p
Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 5.4upCox = 540 uA/V2. In addition, QN and QP have L = 65nm and (W/L)n = 1.5. (a) Find Wp that results in VM=VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL,VIH,VIL,NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.
Consider a CMOS inverter fabricated in a 65 nm process that has the following characteristics: VDD = 2.5V VTn = -VTp = 0.5 V unCOX = 3.5upCOX = 115 uA/V2 QN & QP -> L = 250 nm & (W/L)N = 1.5 (a) For when WP = 3.5WN (matched case), calculate VM, NML, NMH, and the silicon area used. (b) For when WP = WN, calculate VM, NML, NMH, and the silicon area used.