Electrical Engineering Archive: Questions from 2023-04-17

The NMOS transistor in the circuit shown below has kn'(W/L)n = 1 mA/V^2 and a threshold voltage Vtn = 1 V. The PMOS transistor in this circuit has kp(W/L)p = 0.2 mA/V^2 and a threshold voltage Vtp = -1 V. Determine the DC voltage value at the drain of the NMOS transistor when: a) Gate of NMOS is at VGn = 0 V b) Gate of NMOS is at VGn = 5 V

In the circuit shown, M1 serves as an electronic switch. If Vin is very small, determine W/L such that the circuit attenuates the signal by only 5%. Assume VG = 2.2 V and RL = 130 ohm Assume an NMOS transistor with k' = 800 uA/V^2 and Vth = 0.9 V.

An n-channel MOSFET has the following parameters: L = 1 um, Cox = 6.9*10^-8 F/cm^2 , VT = 0.5 V and un = 680 cm^2V^-1s^-1 . Design the channel width such that the saturation current is 4 mA for VG = VD = 1.5 V. Use long channel theory with a bulk-charge factor of 1.4 and VA = 10 V.

The MOSFET circuit shown below uses a MOSFET with the indicated characteristics. For each of the cases listed, solve MOSFET's device current and drain voltage, and indicate whether the device is operating in saturation or triode. (A) R = 100 (B) R = 1k (C) R = 10k