• Electrical Engineering Archive: Questions from 2023-04-19

    The PMOS transistor shown in Fig. E5.7 has Vtp = -1 V, kp' = 60 uA/V^2, and W/L = 10 (a) Find the range of VG for which the transistor conducts. (b) In terms of VG, find the range of VD for which the transistor operates in the triode region. (c) In terms of VG, find the range of VD, for which the transistor operates in saturation. (d) Neglecting channel-length modulation (i.e., assuming lambda =0), find the values of |Vov| and VG and the corresponding range of VD to operate the transistor in the saturation mode with ID = 75 uA. (e) If lambda = -0.02 V-1, find the value of ro corresponding to the overdrive voltage determined in (d). (f) For lambda = - 0.02 V-1 and for the value of Vov determined in (d), find ID, at VD = +3 V and at VD = 0 V; hence, calculate the value of the apparent output resistance in saturation. Compare to the value found in (e).
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    Before CMOS, depletion-mode NMOS devices were used as loads. Consider the circuit below: Use the Shockley long-channel equations for the I-V characteristics of the FET. Let VDD = 5 V. Let the V T of T2 and T3 be 1 V. Let the VT of T1 be -1 V. Let uCox = 20 uA/V2 and let W/L = 10 for all devices. (a) If A and B are both at ground, what is the output voltage at Y? What is the static power drawn from the VDD supply? (b) If A and B are both VDD, what is the output voltage at Y? What is the static power drawn from the VDD supply?
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    For the MOSFET circuit with unCox = 2upCox = 10^-4 A/V^2, ( W/L)2 = 2(W/L)1 = 2, (W/L)3 = 4(W/L)2, (W/L)4 = 0.5(W/L)3, |VTHp| = VTHn = 1 V, VDD = 3 V, VD1 = 1 V, Rout = 20 kohm and lambda = 0, find the value of Vout.

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