Electrical Engineering Archive: Questions from 2023-06-24

(a) Calculate the input admittance Yin for a general admittance matrix shown in Figure 3 (a). (b) Use the formula you get from part (a) to calculate Yin for a NMOS shown in Figure 3 (b).

The transistor in Figure has parameters VTN = 0.35 V and Kn = 25 uA/V^2 . The circuit parameters are V DD = 2.2 V, R1 = 355 kohm, R2 = 245 kohm, and RD = 100 kohm. Find ID, VGS, and VDS. You may need following information: ID = Kn(VGS - VTN)^2 in saturation. ID = Kn[2(VGS - VTN)VDS - V2DS] in nonsaturation.

Determine VGG such that the Q-point is in the middle of the saturation region when VDD = 5 V. The transistor parameters are: VTO = 1 V, VTL = -1.5 V, kn' = 25 uA/V^2 , (W/L)L = 2, and (W/L)O = 10.

Determine VGG such that the Q-point is in the middle of the saturation region when VDD = 7 V. The transistor parameters are: VTO = 2 V, VTL = -2.5 V, kn' = 25 uA/V^2 , (W/L)L = 5, and (W/L)O = 10.