An NMOS transistor is fabricated in a 0.18-um process having unCox = 200 uA/V^2 and VA' = 50V /um of channel length. If L = 0.8 um and W = 16 um, (a) Find VA and lambda. [3 points] (b) Find the value of ID that results when the device is operated with an overdrive voltage Vov = 0.5 V and VDS = 1 V. Also find the value of ro at this operating point. [4 points] (c) If VDS is increased by 2 V, what is the corresponding change in ID? [3 points]
Design the above circuit to provide an output current of 100uA. Use VDD = 1.3V, and assume the PMOS transistor to be identical and have upCox = 128uA/V^2, Vtp = -0.4V, and |VA| = 3V. The current source is to have Vov = 0.2V, and specify the values of transistor W/L ratios and VG3 and VG4. What is the highest allowable voltage at the output? What is the value of Ro?
Design the circuit of Fig. 7.10 to provide an output current of 100 uA. Use VDD = 3.3 V, and assume the PMOS transistors to have upCox = 60 uA/V^2, Vtp = -0.8 V, and | VA| = 5 V. The current source is to have the widest possible signal swing at its output. Design for Vov = 0.2 V, and specify the values of the transistor W/L ratios and of VG3 and VG4. What is the highest allowable voltage at the output? What is the value of Ro?