Assuming Vin = 5V, Vtn = |Vtp| = 1 V and Kn = Kp = 0.2 mA/V^2 determine the current each enhancement transistor.
For the following inverter input and output pulse responses, obtain the: rise time, fall time, edge rate, high-to-low and low-to-high propagation delays.
The transistor in Figure has parameters VTN = 0.35 V and Kn = 25 μA/V2. The circuit parameters are VDD = 2.2 V, R1 = 355 kΩ, R2 = 245 kΩ, and RD = 100 kΩ. Find ID, VGS, and VDS. You may need following information: ID = Kn (VGS - VTN)^2 in saturation. ID = Kn[2(VGS - VTN)VDS – VDS^2] in nonsaturation.
Determine small signal voltage gain if VCEQ = 5.0 V. Transistor parameters (NMOS): kn = 100 μA/V2, VTN = 1 V, and λ = 0.01 V-1. Transistor parameters (BJT): β = 100, VBE (on) = 0.7 V, and VA = ∞.
Consider an NMOS inverter. The NMOS has a W/L ratio of 2.22/1 and kn' = 100 μA/V2, VDD = 2.5 V, VT0 = 0.6 V. and the resistor is 28.8 kΩ. Assume that the load capacitor is 0.1 μF. What are the (a) Static Power Dissipation, (b) Dynamic Power Dissipation, (c) rise time, (d) fall time and (e) propagation delay.
There are two parts. For each part, determine the mode (saturation “S” or triode “T”), then compute the values of v1 and v2 as shown in the diagram to the right. a. First, use V0 = 6V, K = 0.54mA/V2 , |VT| = 0.7V, I0 = 2.1mA, and R = 2.5kΩ. mode = v1 = v2 = b. Then, use V0 = 10V, K = 0.48mA/V2 , |VT| = 0.6V, I0 = 4.2mA, and R = 4.8kΩ. mode = v1 = v2 =
A NOR SR flip-flop is specified with (a) WDR(N) = 125 nm for NMOS devices and WDR(P) = 375 nm for PMOS devices, (b) 10-fF load capacitance at its Q output, and (c) 7-fF load capacitance at its Q output. 1. (3 points) Suppose that the flip-flop is initially in a hold state with Q = 1 and Q = 0. At t = 0, R steps up to logic-1. How much later does Q change its state? Now suppose that the flip-flop is initially in a hold state with Q = 0 and Q = 1. At t = 0, S steps up to logic-1. How much later does Q change its state?
Consider an inverter made in a process where NMOS: kn' = 85 μA/V2, VT0 = 0.7 V, λ = 0.05 V-1, VDSAT = 0.8 V, PMOS: kp' = - 25 μA/V2 , VT0 = -0.6 V, λ = -0.1 V-1, VDSAT = -1.2 V. a) What is the minimum size (width and length in λ) of the PFET and NFET required to make VM = Vdd/2 = 1.65 V ? b) What is the minimum size in λ of the PFET and NFET required to make VM= Vdd/4 = 0.825 V
Estimate the AC current, iT, that flows in the test voltage vT (1mV at 1MHz) in the circuits shown below (and thus what is the small-signal resistance, vT/iT , seen by vT?) Use the process data for long-channel (1 μm) length MOSFET. What would happen to the DC biasing of the MOSFET if the capacitor was removed so that the test voltage was connected directly to the drain? Hints: the AC current flowing through the resistor is vT/R while the AC current flowing in the MOSFET is either vT/ro (for saturation region operation, see Eq. [9.6] in Baker) or vT/Rch for triode operation (see Eq. [9.16] in Baker). The resistance seen by vT is then the parallel combination of the resistors.
For the transistor in this question, assume VDD = 1.8 V, μnCox = 400 μAV-1, μpCox = 200 μAV^-1, Vthn = Vthp = 0.5 V, |λp| = 0 V-1) a) For the static CMOS logic gate in this figure. Please draw the pull down network. b) Please size the transistors so that the equivalent network (W/L)’s will be (W/L)neq = 4 and (W/L)peq = 8, (in the worst case) c) Please state the input transitions that yield the worst-case tPHL and tPLH delays. (Remember to take intermediate node capacitances into consideration) d) Please calculate the worst case logical effort for this gate.
Consider the circuit shown above right. Here, you will use the following NMOS and PMOS models. You can import them into LTSpice a. Determine W2 such that an input DC level of 0.75 V yields an output DC level of 1 V. What is the low-frequency voltage gain under these conditions? Use AC analysis in SPICE to view the gain vs. frequency response of the amplifier. b. What is the change in the gain if the width and length of NMOS and PMOS devices varies by ±10% individually? Which one is the most sensitive? c. Establish a simulation setup to simulate the output resistance of the amplifier. What is the simulated value of the output resistance?
7.12 The enhancement-type MOS transistors have the following parameters: VDD = 5 V VT0 = 1.0 V for both nMOS and pMOS transistor λ = 0.0 V -1 μpCox = 20 μA/V2 μnCox = 50 μA/V2 For a CMOS complex gate OAI432 with (W/L)p = 30 and (W/L)n = 40, (a) Calculate the W/L sizes of an equivalent inverter with the weakest pull-down and pull-up. Such an inverter can be used to calculate worst-case pull-up and pull-down delays, with proper incorporation of parasitic capacitances at internal nodes into the total load capacitance. In this problem, you are asked to calculate only (W/L) worse - case for both p-channel and n-channel MOSFETs by neglecting the parasitic capacitances.
Consider the amplifier circuit shown below. Assuming RSi = 0, determine the transconductance of the transistor, gm, in mA/ V if the small-signal voltage gain is Av = -10, ro = 106 kΩ, and RD = 9.6 kΩ. Give your answer to one decimal point.
Please list two defects that can be found in a silicon crystal and draw a diagram to show how they look like in the crystal. Looking at the layout of a CMOS Inverter below, please answer the following questions considering that the process is 180 nm. What is the length of the PMOS and NMOS channels in nm? What is the width of the PMOS and NMOS channels in nm? What is the surface area PMOS and NMOS channels in nm^2?
(a) State the advantages of the CMOS inverter over the NMOS inverter. (b) Realize the following logic function using NMOS & CMOs logic gates. F = (A+B).(C+D).E (c) For a particular logic family for which the supply voltage is V+, VOL = 0.18 V+. VOH = 0.87 V+, VIL = 0.35 V+, and VIH = 0.55 V+. (i) What are the noise margins (NML and NMH)? (ii) What is the width of transition region? (iii) For a maximum noise margin of 2 V, what value of V + is required (d) If VA = 4 V, find Vout for the NMOS inverter shown in figure 5. (Given VT = 1 V and μnCox = 40 μA/V2) (e) If VA = VB = VC = 4 V, find Vout for the 3 input NAND gate shown in Figure 6. (Given VT = 1 V and μnCox = 40 μA/V2)
The transistor parameters are: VTO = 0.8 V, VTL = -0.8 V, kn' = 50 μA/V2, and kp' = 25 μA/V2. For (W/L)N = 1, and (W/L)P = 5, determine the peak current in the inverter during a switching cycle for VDD = 5 V.
Consider the amplifier circuit below. Produce the small-signal equivalent circuit using: the pi-model for α ≤ 8 the T-model for α ≥ 9. Ignoring ro, write expressions for (a) the amplifier voltage gain (b) the input resistance (c) the output resistance.
Consider the PMOS common-gate transistor given in Figure 3. The transistor parameters are as follows: VTP = −1 V KP = 0.5 mA/V2 λ = 1 V−1 Find the following values if IDQ = 0.5 mA, VDSQ = 5 V, RG = 50 kΩ, Ri = 150 kΩ and R1 = R2 = 4 kΩ. a) RS. b) RD. c) Input & output impedance Ri and Ro. d) Vo for I = 2 μA.
For the MOSFET amplifier shown in figure Q1-A, is to be designed for the use in telephone circuit. It should work in the frequency range from 200 Hz to 3 KHz according to the given frequency response. Consider the transistor gm = 2mS, Determine value of the: i- Resistor RD ii- Capacitor Cc iii- Equivalent input capacitance Ci in case of fHi = fH.
Using the CMOS long-channel process (1 μm), determine the current flowing in the circuit shown below. Can M1 and M2 be replaced with a single MOSFET? If so, how and what size? If not why?
For the circuit, (a) Draw a rough voltage transfer curve. (b) Do the transistors in this circuit suffer from body effect? Explain why or why not. (c) Find the expression for VOL and VOH in terms of the circuit and transistor parameters kn’, kp’ and W/L. Assume VT and VDSAT have the same magnitude for both NMOS and PMOS devices. Given that the input Vin swings between GND and VDD. (d) Does this circuit consume static power? Explain why or why not. For the MOSFETs use the following device parameters unless otherwise specified. Kn’ = 120 μA/V2 VTN0 = 0.43 V VDSAT = 0.63 V λn = 0 kp’ = 30 μA/V2 VTP0 = -0.4 V VDSAT = -1.0 V λp = 0 Assume that the bulk terminals of all the NMOS devices are connected to ground. Assume that the bulk terminals of all the PMOS devices are connected to VDD. Assume VTN = 0. 55V VTP = -0. 55V when body effect is a factor.
For the amplifier circuit on the left, the LED is ON and dissipates 2 mW power. MOSFET parameters: Kn = 2 mA/V2, VTn = 1 V, λ = 0, Cgs = 100 pF, Cgd = 0 Circuit parameters: VDD = 6 V, VSS = -6 V, R1 = 2 MΩ, R2 = 1 MΩ, RD = 2 kΩ LED parameters: Vγ = 1V, g0 = 2mA/V, CD = CJ + Cdif = 40pF a) Calculate resistor R, b) Calculate the DC Quiescent point, c) Draw the high frequency AC equivalent circuit and calculate upper 3dB cut-off frequency fH.
What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0V of no more than 0.21nA per W/L at 300°K? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 30nm, and an effective oxide thickness, Toxe, of 21 angstroms. Use kT/q = 26mV at 300°K.
For the circuit in Fig.2, there is a constant current source which requires 0.8 V voltage drop to generate the constant current. Compute the value of gate voltages of each transistor (VG1, VG2, and VG3) for this circuit where (W/L)1 = (W/L)2 = 4*(W/L )3 = 20. Draw a representative MOSFET circuit for the constant current source. Assume λ = 0, μnCox = 200 μA/V2 , Vt,n = 0.4 V.
Consider a two-stage amplifier shown below. Suppose that VB = 2V. All PMOS transistors are identical. Determine the small signal output resistance rout and the gain vout/vin. Transistor parameters: kp’ = μpCox = 50 uA/V^2, kn’ = μnCox = 100 uA/V^2, VAn = VAp = 25 V, VT,n = 1 V, VT,P = -1 V, WP2 = 32u, LP2 = 1u, WP3 = 80u, LP3 = 1u, Wn1 = 4u, Ln1 = 1u. In DC analysis, neglect the Early effect and use the following equation: ID = 1/2kp,n’W/L(VGS - VTp,n)^2. In small analysis you should consider the Early effect. To find the gain (vout/vin) of the amplifier, you need to find the gain of each stage.
In the common gate stage amplifier, the internal resistance of I is 1 kΩ, what is the output resistance when IREF = 0.01 mA and 0.1 mA respectively? (Neglect body effect) Parameter for NMOS: VTHN = 0.7 V, Kn = 110 μA/V2, λ = 0.04 V -1 Parameter for PMOS: VTHP = -0.7 V, Kp = 50 μA V2, λ = 0.05 V-1 All the size of transistor is W = 20 μm, L = 1 μm.
(a) When operating in saturation region, a NMOS has ID-VGS relationship as shown below: a) Write the NMOS current equation (ignoring channel length modulation effect) based on parameters kn’, (W/L), gate-source voltage VGS and threshold voltage VTN which represents the current characteristics shown above: iD = b) Value of threshold voltage VTN = V c) Value of kn' parameter if (W/L) = 5. μA/V2 d) Drain current iD at point C (VGS = 2. 5V). mA
Please consider the CMOS amplifier of Figure 3. Given that (Gate Voltage of M1 = VG1) VG1 = -8 V and λn = λp = 0.0125 V-1. Assume that all NMOS transistors have kn' = 50 μA/V2, VTN = 1 V and all PMOS transistors have kp' = 25 μA/V2, VTP = -1 V. Neglect λ for bias calculations. Assume saturation region operation for all transistors. The transistor aspect ratio W/L is given on the figure for each transistor. (Recall: kp' = Cox⋅μn and kp' = Cox⋅μp a) Please, find IREF and R. b) Please, find IDQ for each transistor c) Please, find the voltage gain, vo3/vo2 .
Define the region of operation (i.e., cut-off, linear, channel pinch-off a.k.a long-channel saturation or velocity saturation). Assume Vdd = 3.3 V and Vtn = |Vtp| = 0.4V and Vdsatn = |Vdsatp| = 1.1 V and obtain the drain current Ids. Justify your answer with proper analysis. (Prediction does not give you credit). Use the following transistor data - NMOS: kn’ = 115 μA /V2 , λ = 0.06 V-1 , PMOS: kp’ = -30μA V2 , λ = -0.1 V -1 . Assume W/L = 1 and VSB = 0.
In the given circuit, it is given as kp = 3.6mA V^2 , Vtn = 2V, λ = 0 for the mosfet. Since VGSQ= 3.62V in the circuit, what is the value of VDSQ voltage? Values are approximate. VDSQ = 8 V VDSQ = 14 V VDSQ = 10 V VDSQ = 6 V VDSQ = 12 V
In the given circuit, it is given as kp = 2mA/V^2 , Vtp = -1V, λ = 0 for the mosfet. Since VSGQ = 3.62V in the circuit, what is the value of the power consumed on the mosfet? Values are approximate. PD = 68.6 mW PD = 34.3 mW PD = 114.4 mW PD = 127.8 mW PD = 63.9 mW
MOSFET shown below has an input of a 0 or a 1. For each circuit, determine whether or not the nodes x and y are electrically connected. For each circuit shown, determine the values of the input variables that will insure that nodes x and y are electrically connected. Determine the input combinations that will yield a circuit in which nodes x and y are electrically connected.
Design the fully differential amplifier stage shown in figure below; where Rp = 100Ω, represent some parasitic resistance of metal traces. The mismatch percentage in the drain resistances is given as 5%. The differential amplifier stage should have a power budget of 3.6 mW and a common-mode rejection ration (CMRR) of 40000. Neglect channel length modulation for M1, and M2 only. a) Find the differential pair M1 and M2 aspect ratio (W/L). b) Given (W/L)3 = (W/L)4 = 10; and (W/L)5 = 20 for M3, M4 and M5 respectively. Find the required biasing voltages Vb1, and Vb2. Consider that these devices operate at the edge of saturation. c) Find the output common-mode gain (Acm-cm). Consider the following: λp = 2λn = 0.2 V-1. μnCox = μpCox = 250 μA/V2. Vtn = 0.4 V, and Vtp = -0.5 V. M1 and M2 are identical. M3 and M4 are identical.
Design the following cascode stage shown in figure below. The stage is to have a power consumption of 9 mW. Consider that the input voltage de level (bias voltage) is 1.2V, and that all devices are operating at edge of saturation. Find the following: a) Find the devices aspect ratio (W/L). a) Find the devices aspect ratio (W/L). b) Find the voltage gain Av of the stage, and the biasing voltages required. c) If you have an input voltage vn (t) = 10mV*sin(ω0t); plot the output voltage and comment on your results. Consider the following: λn = 2λp = 0.1 V-1 and μnCox = μpCox = 250 μA/V2. Vtn = 0.4 V, and Vtp = -0.5 V. M1 and M2 are identical. M3a, M36, M4a and M4b are identical. Hint: Find the the output voltage DC level before plotting.