In the circuit of Fig. P3-1, a DMM is used to measured the drain-source resistance rDS as a function of applied gate-source voltage VGS. The following data is obtained: Estimate the threshold voltage Vt and kn’W/L for this MOSFET. Figure P3-1. P2. The MOSFET from part P1 is used in the resistive load logic inverter shown in Figure P3-2. Find vOUT for vIN = 0 V and vIN = +5 V. Fig. P3-2 vGS rDS 1.0 V ∞ 1.5 3180Ω 2.0 710Ω 2.7 330Ω 4.0 180Ω
An n-channel MOSFET that operates in the saturation region has the following measured data - Do not ignore channel-length modulation effect in your calculations. (a) determine the threshold voltage (VTH), conductance parameter (Kn), and channel-length modulation factor (lambda_n) of the MOSFET. (10 marks) (b) determine the transconductance (gm), and the output resistance (ro) of the MOSFET when it operates at VGS = 4 V and VDS = 4 V. (5 marks)
For Questions 8 to 10, consider the following static fully complementary CMOS circuit implementing the 4 -input logic function ~(A(B+C) + D). The (W/L) aspect ratios of all the nMOS and pMOS transistors are labelled in red in the circuit diagram as shown below. The voltage transfer characteristics - VTC1, VTC2 and VTC3 - for three different input transitions of (A,B,C,D) are shown below. Match each voltage transfer characteristic with the corresponding input transition. Input Transition T1: Input A = 0-->1, Input B = 0-->1, Input C = 0, Input D = 0-->1 Input Transition T2: Input A = 0-->1, Input B = 0, Input C = 0-->1, Input D = 0 Input Transition T3: Input A = 1, Input B = 0-->1, Input C = 0, Input D = 0. Which input transition does VTC1 correspond to? * (1 Point) T1 T2 T3 Which input transition does VTC2 correspond to? * (1 Point) T1 T2 T3 Which input transition does VTC3 correspond to? (1 Point) T1 T2 T3