Calculate the voltage Vout at t = oo, for the 5 configurations shown in Figure 1. Assume VT,NMOS = 0.4 V and VT,PMOS = -0.3 V, where VT is the transistor threshold voltage and CL is the load capacitor, and at t = 0, Vout = 0. Also, assume that all the internal nodes are at 0 V at t = 0. You can write your calculated Vout for each circuit next to it
For three different MOSFET amplifies shown below, all small signal parameters are same as gm = 0.85 mA/V, ro = 80 kohm, figure out the Ro and Av = vo/vi for the three different cases.
The parameters of the transistor in the circuit shown in Figure 1 are VTN = 0.8 V, Kn = 1 mA/V2, and λ = 0. Find the operating point (IDQ, VGSQ, VDSQ) and RD such that VD = 1.5 V. Draw the small signal circuit and determine the small-signal voltage gain Av = vo/vi; (i) without RL (ii) with RL = 5 kΩ
For the circuit in Fig.4, find the minimum voltage for Vb2 that can ensure both transistors operate in saturation. (VTH0 = 300 mV, unCox = 0.15 mA/V2, lambda = 0 V-1, Vcc = 2 V, gamma = 0 V0.5, W1 = 20 um, W2 = 50 um and L = 0.40 um, RL = 1 kohm, Ids = 1 mA)
The NMOS transistors in the circuit of Fig. 1 have VTH0 = 300 mV, unCox = 0.15 mA/V2, lambda = 0 V-1, Vcc = 1.2 V, gamma = 0.45 V0.5, W = 2 um and L1 = 0.40 um. a) Sketch the current and transconductance of NMOS versus Vx(R1=0.1kohm, I1=1 mA) for the input voltage source (Vx) varying between 0V and 2Vcc. (Hint: Determine the different regions of operation of a transistor and derive a current equation for each region, then find the threshold voltage for changing the operation region. Likes below figure) b) For the circuit in Figure 3, sketch the output voltage versus Vb for the bulk voltage source (Vb) varying between 0 V and 1 V. The bulk of the transistor should be considered, phiF = 0.45 V. c) For the circuit considered in Figure 3, explain qualitatively what would happen for Vb > 1 V.
For a CMOS process with Lmin = 0.18 μm, tox = 4.1 nm, μn = 460 cm2/V⋅s, and Vt = 0.373 V. Express Cox in F/m2 and fF/(μm)2. The gate dielectric is SiO2. a) (7pts) Find Cox and kn' b) (7pts) For an NMOS transistor with a W/L of 60 , calculate the values of Vov, VGS, and VDSmin needed to operate the transistor in the saturation region with a DC current of 0.8 mA. c) (6pts) For the device in b) find the value of Vov and VGS required to cause the device to operate as a 500 ohm resistor for a very small VDS.