Find the width of following PMOS transistor for the inverter to be symmetric (have a gain ratio equal to 1)
CMOS inverter circuit is shown in the figure below with the following parameters: The inverter work with a power supply of 4 V, VOL = 0 V, C = 15pF, Vout = V10% ? =0.4 V and Vout = V90% = 3.6. Determine the following: a) The fall time, tfall. b) The propagation delay time tPHL, tPLH and tP. c) The power delay product (PDP).
Consider n-channel and p-channel silicon MOSFETs fabricated on the same wafer with 1.0 um channel lengths and 30 nm thick silicon dioxide. Carrier mobilities for electrons and holes are given as un = 580 cm2V-1s-1 and up = 230 cm2V-1s-1, respectively. a. Determine the process transconductance parameters for n-channel and p channel devices. [10 Pts] b. Determine the channel widths for n-MOS and p-MOS transistors such that the device transconductance parameters are both 0.3 mA/V2.
An NMOS transistor biased in the saturation region displays a drain current of 200 uA at a VGS of 1.5 V, and a drain current of 20 uA at a VGS of 0.8 V. Determine the threshold voltage and unCox(W/L) of the device, assuming lambda = 0. (b) Calculate the small signal parameters (gm and ro) of the device mentioned in part (a), assuming the device is biased at (ID, VDS) = (100 uA, 1 V) and lambda = 0.2. Neglect the body effect.