Electrical Engineering Archive: Questions from 2023-10-23

Assume NMOS device M1 has μnCox = 200 μA/V2, VTH = 0.4 V, and λ = 0. 1. If M1's W/L = 125, find the value of ID that will make the amplifier's output resistance Rout = 200 Ω. What is the lowest value of supply voltage VDD(min) that will keep MI in saturation, assuming the ideal current source needs at least 1 V to operate properly?

Construct and design a CMOS NOR gate with two inputs having KN = KP = 400 μA/V2, VDD = 2.5 V, VTN = 1 V, VTP = −1 V and load capacitance of 10pF is connected at its output ,determine its switching speed and the total power consumed by the gate.

The circuit below is a model of a MOS common drain amplifier where vs is the input voltage and vo is the output. a) Find the differential equation for vo.(3 pt) b) if vo(0) = 0 and if vs(t) = 1 V for t > 0, what is the solution for vo(t) for t > 0. (Consider R, C, g are known; note that Vs is not known) (2 pt)

A CMOS digital logic circuit contains the equivalent of 3 million CMOS inverters and is biased at VDD = 1.8 V. The equivalent load capacitance of each inverter is 0.01pF an total average power dissipated by this circuit is equal to 5 watts, determine the maximum frequency at which this circuit can operate?

Given that, VDD = 5 V, VTN = ∣VTP∣ = 0.4 V, kn = 100 μA/V2, kp = 30 μA/V2, λn = 0.02V−1, λp = 0.01V−1, (W/L)2 = 10, (W/L)1 = 3, (W/L)3 = 30 1) Find IO. For this part, you can ignore λn and λp. (10 points) 2) What's the output resistance RO? (5 points) 3) Find VO,max.(5 points )