The NMOS cascode of Fig. 1 must provide a bias current of 0.5 mA with an output impedance of 40 kΩ. If μnCox = 50 μA/V2 and λ = 0.2 V−1, determine the required value of (W/L)1 = (W/L)2
Using DC analysis: Find the values of RS and RD that result in the MOSFET operating with an overdrive voltage of 0.5 V and a drain voltage of 1.5 V. What is the resulting ID value?
For the CMOS inverter below determine the mode of operation for each transistor, the supply current, and the output voltage.
The current in an NMOS transistor is 0.5 mA when VGS - VTN = 0.6 V and 1.0 mA when VGS - VTN = 1.0 V. The device is operating in the nonsaturation region. Determine VDS and Kn.
Consider the circuit of Fig. 5.56 for the case VDD = VSS = 10 V, I = 0.5 mA, RG = 4.7 MΩ, RD = 15 kΩ, Vt = 1.5 V, and kn′(W/L) = 1 mA/V2. Find VOV, VGS, VG, VS, and VD. Also, calculate the values of gm and ro, assuming that VA = 75 V. What is the maximum possible signal swing at the drain for which the MOSFET remains in saturation?
Consider the following circuit implemented using NMOS and PMOS pass transistors (Fig. 1). Assume that the inputs and their complements (A, Aˉ, B, Bˉ) swing from 0 to VDD. What is the function implemented by the two circuits. Can the output be strongly driven at both high and low states? The following figure shows the circuit implemented using NMOS and PMOS pass transistors. Suppose the input and its complement (A, A', B, B') swing from 0 to VDD. What function can we achieve with these two circuits. Can the output be driven strongly in both high and low states?
The MOSFET in the circuit below has Vt = 0.5 V and λ = 0. The dc voltages at the source and the drain are measured and found to be −0.75 V and +1.6 V, respectively. Assume all three capacitors to be very large. (a) Show that the MOSFET is operating in saturation and find VOV, RD, and gm. (b) Using Inspection Formulas, determine Rin, Rout, and calculate the overall voltage gain obtained when the switch S is connected to position 1. (c) Draw the small-signal equivalent circuit using the Hybrid-𝜋 model. (d) If, when the switch S is moved to position 2, the amplitude of vo drops to half its value, what do you estimate the value of Rs to be?
Consider the CMOS amplifier shown below. The circuit has the following parameters: VDD = 2V, Vth = 0.3V, kn = 2mA/V2 and RF = RD = 1kΩ. The input voltage source has zero source impedance. Calculate the value of Vin for which the transistor moves from saturation to linear region. For linear region, use the following I−V equation Id = kn(VGS − Vth)Vds
A current mirror is shown in the figure below. The circuit is designed to mirror an input current of Iin = 0.5 mA. In the circuit, RS = 250 Ω. The two transistors are identical, with the parameters of μnCox = 270 μA/V2, λL = 0.08 μm/V, W/L = 20 μm/0.2 μm, and Vt = 0.5 V. Find: (1) The output current Iout of the circuit (ignore the channel length modulation effect). (2) The minimum output voltage of the current mirror (ignore the channel length modulation effect). (3) The output resistance Rout of the circuit (include the channel length modulation effect). Hint: for part (3), apply the general method of finding the output resistance of a circuit first.