The output characteristics for an NMOS transistor are given in Fig. P4.18. What are the values of Kn and VTN for this transistor? Is this an enhancement-mode or depletion-mode transistor? What is W/L for this device?
For a MOSFET current source circuit in Figure 1 the transistor parameters are VTN = 0.5 V, λ = 0, and k’n = 80 µA/V2 . Design the circuit such that VDS2(sat) = 0.3 V, IREF = 50 µA, and the load current is IO = 100 µA. Show clearly all calculations as marks are given according to this.
If a PMOS FET with W/L = 8.0 has |Vgs| = 0.77 and |Vds| = 2.37, what is the magnitude of the drain current in microamps? Use: VTP = -0.5V, k’p = 40μA/V^2, λ = 0.93
What W/L ratio is needed for an NMOS FET biased in triode with Vgs = 0.7 and Vds = 0 V to have an on-resistance of 300.4 Ohms? Use: VTN = 0.5 V, k′n = 100 μA/V^2.
The ID vs. VDS IV curve of a certain nMOS transistor (with VGS – VTH = 2 V ) is plotted above (solid). The transistor will be loaded with RD = 1000 Ω and VDD = 6 V. This load line has been plotted above (dash-dot). What is the value of k? Note that the intersection of the two curves provides the operating point of the MOSFET. What is ID?