An NMOS transistor that is operated with a small vDS is found to exhibit a resistance rDS. By what factor will rDS change in each of the following situations? (a) Vov is doubled. (b) The device is replaced with another fabricated in the same technology but with double the width. (c) The device is replaced with another fabricated in the same technology but with both the width and length doubled. (d) The device is replaced with another fabricated in a more advanced technology for which the oxide thickness is halved and similarly for W and L (assume μn remains unchanged).
A PMOS FET circuit is shown below. The transistor is biased using a resistive voltage divider formed by RG1 and RG2. The transistor has kp = 2 mA/V2 and Vt,p = −1V. The transistor is to be biased with ISD0 = 1 mA. The supply voltages are ±5 V. a) Calculate the values of RG1 and RG2 if the current flowing through them is 10 μA. b) Calculate the actual source-to-drain current ISD if the drain resistor RD = 3 kΩ and the MOSFET's channel length parameter λ = 0.04 V−1.
Consider an NMOS-based logical gate circuit shown below. Each NMOS has same characteristics: kn′W/L = 10 mA/V2 and Vt = 1 V. The voltage of power supply is VDD = 5 V. The input voltages E1 and E2 are applied at gate terminals of NMOS M2 and M3. The input voltages of E1 and E2 are provided below. a. Find the gate voltage at NMOS M1 in each case. b. Find the drain current passing through NMOS M1 in each case. c. Draw and label the output voltage VF versus time. d. Explain which logic gate operation is performed by the given NMOS circuit.
Consider the following circuit and the family of IV characteristic curves. You are given that VTH = 1 V, VDD = 3 V, and RD = 100 Ω Use the ID-VDS characteristics to find the transistor parameter k and the value of VGS that produces VGS = 1V.
Consider the following circuit and the family of IV characteristic curves. The ID vs. VDs IV curve of a certain nMOS transistor (with VTH = 1.3 V and k = 10 mA/V2) is shown 12 V above. The transistor is loaded with RD = 133.3 Ω and VDD If the transistor is biased with VGS = 3.3 V, what is VDS?
Consider the following circuit and the family of IV characteristic curves PLUS the load line of the biasing circuit. You are given that VTH = 2 V, VDD = 15 V, and RD = 500 Ω Use the ID−VDS characteristics to find the transistor parameter k and the value of VGS that produces VDS = 12.5 V.
Design a MOS single transistor amplifier, with the available components listed below, satisfying the following requirements Rin ≥ 50 kΩ Rout ≤ 5 kΩ ∣GV∣ = ∣Vout/vsignal∣ ≥ 20 V/V Do not forget to verify that your transistor operates in the proper region. Available components: MOSFETS with: Kn = 10 mA/V2, VTn = 1 V, λ = 0 V−1 DC Supply: VDD = 15 V Resistors: 1k, 2k, 3k, ..., 999M (All values are included), Available resistors can be used more than once Capacitors: Many capacitors with very large capacitance values are available.