In the amplifier circuit shown in Fig. Q5, the MOSFETs, M1 and M2, are identical with a Threshold voltage magnitude of 1.2 V, a Conductance Parameter of 2 mA/V2 and they do not experience Channel Length Modulation effect. Fig. Q The MOSFET M1 is in saturation operation and its drain current, ID,M1 = 1.2 mA. (a) Show that the DC drain current of MOSFET M2, ID,M2 = ID,M1 with reasoning. (4 marks) (b) Determine the value of RREF. (4 marks) (c) Which MOSFET, M1 or M2, performs the amplification function? Why? (2 marks) (d) What is the configuration of the amplifier circuit? (1 mark) (e) Determine the values of the 2-port network equivalent parameters of the amplifier: Gm( or Av),Rin and Rout . (5 marks) (f) Determine the gain (vout /vs) of the amplifier. (2 marks) (g) If RA is zero, discuss the effects on the operation of the amplifier circuit. All the other resistors in the amplifier circuit are not changed. (2 marks)
Assume transistor M1 has the following properties. Assume Vin has a DC level of 2V and RD = 2k VT,n = 1.0V, µnCox = 1mA/V2, VDD = 5V, W/L = 2 Find the drain current of M1 and the DC value for Vout Draw a small signal model for this design Find the gain from Vin to Vout. What is the phase relationship between Vin and Vout.
Assume transistors M1/M2 have the following properties. Assume Vin has a DC level of 1.2V and RD = 2k VT,n = 1.0V, µnCox = 1mA/V2, VDD = 5V, For M1 W/L=3, For M2 W/L=2 Find the drain current of M1 and M2 and the DC value for Vx and Vout Draw a small signal model for this design. Find the gain from Vin to Vout. What is the phase relationship between Vin and Vout.
What are the drain currents in M1 and M2 in the reference in Fig.P14.88. if R = 6.8kΩ and VDD = VSS = 5 V? Use Kn′ = 25μA/V2,VTN = 0.7 V, Kp′ = 10 μA/V2, and VTP = −0.7 V. Assume γ = 0 and λ = 0 for both transistor types. (b) Repeat for γn = 0.6 V0.5 and γp = 0.5 V0.5. (c) What is the temperature coefficient (TC) of current ID2 in the reference in if mobility varies as T-2.4 and resistor R has a TC of −2000ppm/∘C ?
The sizing of the NMOS and PMOS transistors is shown in the inverter to have similar tpHL and tpLH. A complex gate structure is shown toward the right to produce the logic function F = D+A⋅(B+C). (a) Find the logical values of the inputs that generate the longest tpHL. (b) Find the logical values of the inputs that generate the longest tpLH. (c) Find the sizing of all the transistors to have the same propagation delays of the given inverter.
A MOSFET connected in the CS configuration has a transconductance gm = 5 mA/V. When a resistance Rs is connected in the source lead, the effective transconductance is reduced to 2.5 mA/V. Estimate the value of Rs. Hint: Take the "effective transconductance" to be: gm, effective = gm / 1 + gmRs.
Consider the circuit shown below, where (W/L)1 = 10/0.18 and (W/L)2 = 30/0.18. If λ = 0.1 V−1, calculate VB such that VX = 0.9 V⋅ μn1Cox1 = 200 μA/V2. μn2Cox2 = 100 μA/V2⋅ VTH = 0.4 7.13. Consider the circuit shown in Fig. 7.50, where (W/L), = 10/0.18 and (W/L), = 30/0.18. If λ = 0.1 V-1, calculate VB such that Vx = 0.9V.
A CS amplifier utilizes a MOSFET with μnCox = 400 μA/V2 and W/L = 10. It is biased at ID = 0.5 mA and uses RD = 10 kΩ. Find Rin, Avo, and Ro. Also, if a load resistance of 10 kΩ is connected to the output, what overall voltage gain Gv is realized? Now, if a 0.5−V peak sine-wave signal is required at the output, what must the peak amplitude of vsig be?
You want to use a MOSFET to drive LEDs at 20 A. Its specs are listed below: TMax = 250∘C RBJA = 30∘C/W RDS(on) = 5 mΩ Assume an ambient temperature of 25∘C 9. What power (in Watts) is dissipated in the transistor (PT) ? 10. What is the maximum power (in Watts) the transistor can safely dissipate without a heat sink (PD)? 11. The MOSFET would need a heat sink to safely operate. True False
Please identify the status of the MOSFETS in the following amplifier circuit. Vin = Vin1 - Vin2, Vout = Vout1 - Vout2. Vthp = -0.5V, Vthn = 0.5 V, Vb = 2.4 V, VDD = 3.3 V, and Vin1 = Vin2 = 2 V, after measurement, we found that Vc = 1.1 V, and Vout1 = Vout2 = 1.8V. Please identify the status of the MOSFET M1-M4, including if it is turned on, which operating region (triode or saturation) it belongs to.
For the common source amplifier below, the n-channel MOSFET is biased in saturation with a quiescent DC drain current, IDQ, equal to 1 mA. What is the DC bias on the gate, VIQ? It the capacitor, C, is assumed to be very large, e.g., infinite, what is the voltage gain Av0=v0/vi? What is the output resistance of amplifier?
Observe the dc response of an inverter and answer the following questions: Figure 1: DC response curve of a CMOS inverter Vdd = 1v and beta ratio, r = 1. (a) Calculate Vtn, Vtp, Vinv. (b) Evaluate high and low noise margins and comment on its skewness. (c) Why are there one nMOS and one pMOS parallelly connected in a transmission gate?
The differential gain circuit below is perfectly symmetric. Assume all transistors are kep n saturation and that γ = 0. a. Draw the equivalent half-circuit. b. Derive an expression for the circuit's small-signal differential gain in terms of the transistor small-signal parameters: gm, ro, etc. c. Derive an expression for the circuit's small-signal output resistance in terms of the transistor small-signal parameters. d. Find the common mode gain and CMRR of the circuit in terms of the transistor small signal parameters if the current source Ibias has an output resistance of Rss.
A CMOS amplifier is shown in Fig. P5.1-9. Assume M1 and M2 operate in the saturation region. (a) What value of VGG gives 100 μA through M1 and M2? (b) What is the de value of vIN ? (c) What is the small signal voltage gain, vout/vln, for this amplifier? (d) What is the −3 dB frequency in hertz of this amplifier if Cgd1 = Cgd2 = 5fF, CbdI1 = Cbd2 = 30fF, and CL = 500fF?
For the circuit diagram in Figure 4, the NMOS and PMOS were fabricated in a process where μnCox = 120 μA/V2, μpCox = 60 μA/V2, Vtn = −Vtp = 1 V. (a) Find the value of the voltage marked at Vy. (b) Determine the width ratio of NMOS and PMOS of the inverter when Vinv = (Vy−0.5)V. (c) Given, VOL = 0 V and VOH = 5 V for the inverter shown in the circuit. Identify the High and Low Noise Margins for an inverter added after Vout which has VIH = 3.9 V and VIL = 1.2 V.
Assume that W/L ratios of Fig. P5.1-6 are W1/L1 = 2μm/1μm and W2/L2 = W3/L3 = W4/L4 = 1μm/1μm. Find the dc value of Vin that will give a dc current in M1 of 110 μA. Calculate the small-signal voltage gain and output resistance of Fig. P5.1-6 using the parameters of Table 3.1-2 assuming all transistors are saturated.
For the following current-mirror circuit, assume that β is very large (α = 1). a) Find the value of the current IREF. b) For what values of V (collector voltage of Q2) is I = IREF valid?
For the given amplifier in the following figure, vs, is an AC signal source. Assume that all capacitors are very large. a) Determine Q-point ( ID, VSD) and the operation region of the transistor. b) Draw small signal equivalent model. c) Calculate the voltage gains vout/vs. d) Determine the input (Rin) and output resistances (Rout). e) Find the maximum input voltage (vs,max) for small signal linearity conditions.