Consider the circuit in the figure, which consists of an ideal MOSFET and an ideal diode. The gate-source voltage applied to the MOSFET is illustrated in the figure. Find the average voltage across ' a ' and ' b '. Find the total conduction loss (in mW) in the diode in Q1 if forward voltage drop of diode is 0.6V and What is the power delivered by the voltage source in Q1 considering diode drop?
Consider the circuitinthe figure below, which uses IRF260MPbF MOSFET for switching. Calculate the switching loss(inmW) associated with the MOSFET for the given gate pulse. Consult the datasheet of IRF260MPbF and use appropriate parameters wherever necessary. fs=10kHz. and Calculate the total conduction losses(inmW) for the MOSFET. Drain-to-Source On-Resistance, (RDS(on) = 0.04 Ω) Total Gate Charge, (Qg =234nC) Drain Current, (ID =50A) Drain-to-Source Breakdown Voltage, (VDS =200V)
As shown in Figure, a bidirectional switch is realised with four identical diodes (D1-D4), and a MOSFET (S1) controls the load voltage VL across the load Resister RL. The circuit parameters are as follows: Vac = Vmsinꞷt, ꞷ = 314 rad/sec, Vm = 25V, [(D1-D4 ) Rd = 0.085 Ω, Vd = 0.1V ] , S1 = IRF540, RL = 12.5 Ω. If the gate signal is applied to MOSFET S1, is as shown in Figure. Calculate the maximum current drawn by the load. and If the switch is continuously turned for the complete cycle of input voltage Vac, then calculate the peak power loss (in Watts ) across the bidirectional switch.
A diode has forward voltage drop of 1 V when conducting and Qrr = 10 μC . The input voltage is 10sin(100πt). R = 1 Ω. Calculate a) Diode conduction loss (1pt) b) Diode reverse recovery loss (1pt) c) Output power (resistor power) (1pt) d) Efficiency of the system (1pt), and e) Carefully sketch the labelled current iD. (1pt)