Calculate the small signal gain of the circuit in V/V given below. The Early voltage of this technology is 35.3 volts and the transistors are biased with an overdrive voltage of VOV1 = 0.08 volts and VOV2 = 0.76 volts. Give your answer to 3 decimal places
The following circuit applies to Questions 11 through 13. Given: μnCox(W/L)1 = 10 mA/V2, μpCox(W/L)2 = 20 mA/V2, Vtn = |Vtp| = 0.4 V, R = 5 kΩ, and VDD = 1.5 V Assuming that both MOSFETs M1 and M2 are biased in saturation, and that λ = 0, find the value of ID1 (in mA) so that the small-signal gain, vout/vin, of this amplifier is −10 V/V.
Question 8. The pMOSFET circuit below has VSS = −VDD = 6 V, Vt = −1 V, k = 0.25 mA/V2 and λ = 0. (1 Point) (a) Specify RS and RD to bias the FET at the edge of saturation (EOS) with ID = 0.5 mA. (b) Specify RS and RD to bias the FET with ID = 2 mA and VSD = 2 V. (c) What happens if the value of RD obtained in part (b) is doubled? What is the new operating point of the FET?
Question 10. The pMOSFET circuit below has VDD = −8 V, Vt = −1 V, k = 0.75 mA/V2 and λ = 0. Specify suitable resistance values to bias the device at ID = 1.5 mA with VD halfway between the values corresponding to the edge of conduction (EOC) and the edge of saturation (EOS). Specify R1 and R2 in the mega-ohm range. (1 Point)