The circuit in the figure below has a PMOS transistor with parameters kn = 120 × 10 −6 V/A2, VT = 0.9 V, W/L = 7 μm/0.5 μm. Channel length modulation is neglected. Simulation model of the PMOS device is given at the end of the question. a. Calculate the values of Vout for Vin values varying from 5 V to 0 V (with steps of 1 V). Note the operating region of the PMOS device in each step.
Q2. Derive the voltage gain (Av) and maximum input voltage (Vi−max) for the MOSFET amplifier given if the Q-point is (129.6 μA, 1.835 V) at VGS = 1.751 V? Assume Kn = 0.450 mA/V2, VTN = 1 V, λ = 0.0133 V −1, and vgs−max = 0.2(VGS−VTN) for small-signal linearity constraint.
Consider the PMOS common-gate circuit shown in the figure. The transistor parameters are VTP = −1 V, Kp = 0,5 mA/V2, and λ = 0. a) Determine RS and RD such that IDQ = 0,75 mA and VSDQ = 6 V. b) Determine the input resistance Rin and the output resistance Rout. c) Determine the load current io and the output voltage vo, if ii = 5sinωt (μA).
A CMOS inverter is to be designed to achieve a delay of 300 ps when driving a 250 fF load using a 2.5 V supply. Assume that the threshold voltages of the CMOS technology are VTN = −VTP = 0.7 V and KN′ = 100 μA/V2 and KP′ = 40 μA/V2 Calculate (W/L)N
Q1) For the given amplifier in the following figure, vs is an AC signal source. Assume that all capacitors are very large. a) Determine Q-point (ID, VSD) and the operation region of the transistor. b) Draw small signal equivalent model. c) Calculate the voltage gains vout/vs. d) Determine the input (Rin) and output resistances (Rout). e) Find the maximum input voltage (vs,max) for small signal linearity conditions.