Electrical Engineering Archive: Questions from 2024-03-30

For the MOSFET bias circuit shown, what value of Rd in kilohms is needed to allow the maximum possible peak-to-peak signal swing on the drain without clipping? Use: Vdd = 6 V, Vss = −8 V, Vg = 1.5 V, Rs = 4.0 kΩ, Vt = 0.3 V, and Von = 0.35. (Remember that Von = Vov = Vgs-Vt) Neglect the effect of channel-length modulation and body effect. (Hint: Be sure to keep the MOSFET in saturation!)

5.55. What is the on-resistance and voltage VO for the parallel combination of the NMOS (W/L = 14/1) and PMOS (W/L = 35/1) transistors in Fig. P5.55 for VIN = 0 V? (b) For VIN = 5 V? This circuit is called a transmission-gate. Figure P5.55

What is the on-resistance and voltage VO for the parallel combination of the NMOS (W/L = 14/1) and PMOS (W/L = 35/1) transistors in Fig. P5.55 for VIN = 0 V? (b) For VIN = 5 V? This circuit is called a transmission-gate. Figure P5.55

(15 pts) The circuit of Fig. 7 is with VDD = 5 V, VSS = −5 V, IREF = 25 μA, μnCox = 250 μA/V2, μpCox = 160 μA/V2, and Vtn = |Vtp| = 1 V. (a) (10 pts) Find ID1, ID2, ID3, ID4, ID5 for 0.2(W/L)1 = 0.5(W/L)2 = (W/L)3 = (W/L)4 = (W/L)5 = 5. (b) (5 pts) Find the value of R. Figure 7.