For the following common source MOSFET nMOS circuit with the given output IV characteristic with VDD = 10 V, a. Determine the value of RD to allow a saturation ID of exactly 325 mA to flow. Make sure to pick and specify the value of VGS that you used (10) b. For this value of RD, if you were to increase VGS to 5 V, would you be in ohmic or saturation/active regime of operation? (5) For the following common source MOSFET nMOS circuit with the given output IV characteristic with VDD = 5 V, a. Determine the value of RD to allow a saturation ID of exactly 120 mA to flow. Make sure to pick and specify the value of VGS that you used (10) b. At the value of VDS at which ID = 120 mA is flowing, estimate the fraction of the channel that is pinched off. Make sure to explain your reasoning carefully. (10)
Question 8. [10 marks] Design a CMOS amplifier using the configuration shown to give an input resistance of 1 MΩ and a voltage gain of at least vOUT/vIN = −5 V/V to a load resistance of 10 kΩ. Let VDD = 5 V, k′W/L = 0.5 mA/V2, |Vt| = 1, and VA = 50 V for all transistors, and assume that C → ∞. Give −VSS and R to provide the required gain. R : 5 kΩ −VSS: VSS = −3 V Figure 4: Common source amplifier.