What is the minimum threshold voltage in millivolts that can be used for an PMOS FET to achieve an off current, loff, when Vgs = 0 V of no more than 0.74 nA per W/L at 300∘K ? Assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 46 nm, and an effective oxide thickness, Toxe, of 37 angstroms. Use kT/q = 26 mV at 300∘K. Answer:
What is the drain current in microamps for a PMOS FET with Vgs = −567 mV, Vds = −763 mV, and Vsb = 0 V ? Neglect the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 33 nm. Use: W = 9.4 μm, L = 0.4 μm, Toxe = 29 angstroms, Vt = −313 mV, and μps = 185 cm^2 /Vs. Answer:
What is the drain current in microamps for an NMOS FET with Vgs = 790 mV, Vds = 186 mV, and Vsb = 0 V ? Include the effects of velocity saturation, and assume that this MOSFET has a steep retrograde body doping profile with a maximum depletion region thickness of Wdmax = 86 nm. Use: W = 8.5 μm, L = 0.9 μm, Toxe = 59 angstroms, Vt = 359 mV, μns = 201 cm^2/Vs, and Vsat = 8×10^6 cm/s. Answer: Check
A MOSFET common source amplifier was built using a supply voltage VDD = 10 V and a transistor having Vt = 1 V. The DC voltages are VGS = 1.2 V and VDS = 5 V. The amplifier has a gain of −10 V/V. The maximum output voltage swing (peak-to-peak) for linear operation is 0.8 V 2.0 V 4.89 V 4.9 V 5.0 V 5.6 V 7.2 V 8.8 V
In the circuits below, NMOS transistors are defined by Vtn = 1.5 V, k′n = 0.5 mA/V2, W = 1.2 μm, L = 200 nm, and λ = 0. And PMOS transistor has Vtp = −2.0 V, kp = 0.1 mA/V2, W = 1.0 μm, L = 200 nm, and λ = 0. Analyze the circuit below to find all node voltages and branch currents. Hint: First convert the input part to its Thevenin equivalent circuit.
For the MOSFET shown in the following figure, kn = 4 mA/V2, Vtn = 0.5 V and VGS−Vtn = 0.3 V. Assume the NMOS is in saturation mode. Neglect the body effect and channel length modulation. a) [1 point ] Determine the DC drain current. b) [2 points ] Determine the DC gate and drain voltage for the MOSFET. c) [2 points ] Determine R for the DC values found in part (a) and (b). d) [1 point] Determine small signal model parameter gm. e) [2 points] Draw the corresponding small signal circuit for the amplifier. f) [3 points ] Determine small signal voltage gain vout vsig . g) [1 point] Determine the small signal input resistance, Rin. h) [2 points ] Determine the small signal output resistance, Rout .
D 9.88 In a current-mirror-loaded differential amplifier of the form shown in Fig. 9.31(a), all transistors are characterized by k′W/L = 4 mA/V2, and |VA| = 5 V. Find the bias current I for which the gain vo/vid = 25 V/V.
Consider the amplifier shown in the figure. The NMOS transistor has Vt = 0.7 V and VA = 60 V and operates at VD = 1.5 V. Determine the value of the voltage gain vo/vi. Use the provided value of VA only for determining rO of the MOSFET (i. e. , you can ignore its influence in the bias analysis). Determine the value of the voltage gain vo/vi. Type in the numerical value rounding it to one decimal place. Pay attention to the polarity of the gain.
For the given differential amplifier with current mirror load, assume: L = 1 μm, Bias Current (ISS) = 0.5 mA, Overdrive Voltage (Vov) = 200 mV, λN = 0.1 V−1, λP = 0.05 V−1, Vthn = 0.4 V, Vthp = −0.4 V, μnCox = 250 μAV2, μpCox = 50 μA/V2 Determine transconductance (gm) for every MOS transistor. Determine output impedance (rds) for every MOS transistor. Calculate the theoretical value of differential gain (Av) using formula. Simulate the differential amplifier with proper design considerations on LTSpice simulation platform and compare the simulated gain with the calculated gain. NOTE: Clearly mention the assumptions taken while solving the problem. For simulation, determine W/L values for each transistor using formulas. Take snapshots of the waveforms and schematic in LTSpice software and include these in your response document. The instructions to
In the circuit shown in Fig. 2 below, Rth = 1 kΩ, RL = 20 kΩ, VDD = VSS = 2 V and IS = 1 mA. The n-channel MOS transistor has VTN = 0.5 V, Kn = 500 μV/A2 and λ → 0. (a) Identify this circuit as a common-source, common-drain, or common-gate amplifier. (b) Draw a DC equivalent circuit of the amplifier. (c) Calculate the gm of the transistor. (d) Draw an AC equivalent of the circuit. Replace the transistor with its small-signal equivalent. (e) Find the overall small-signal voltage gain (vo/vi) of the amplifier. (f) Will the gain (vo/vi) of this amplifier be affected by Rth of the signal source? Why? (g) Find the output resistance of the amplifier seen from RL.
A differential amplifier shown below with a current mirror load. The MOSFET parameters are given beside the circuit diagram. |Q1| = |Q2| = |Q3| = |Q4| = |Q5| = |Q6| kn = 4×10−4 A/V2; Vt = 1 V; VA = 25 V a. Determine the bias current provided I0. b. Determine the single-ended differential gain V0 /[V1 - V2]. c. Determine the common mode gain Acm. d. The following signals are applied to the inputs: V1 = 3 sin(6280t); V2 = 2.98 sin(6280t) What is Vo(t) ?
(26 points) The differential amplifier in Fig. 5 utilizes a resistor RSS to establish a 1−mA dc bias current. Note that this amplifier uses a single 5-V supply and thus the dc common-mode voltage VCM cannot be zero. Transistors Q1 and Q2 have kn′W/L = 4 mA/V2, |Vt| = 0.5 V, and λ = 0. (a) Find the required value of VGS and VCM. (b) Find the values of gm and RD that results in a differential gain Ad of 10 V/V. (c) Determine the dc voltage at the drains. (d) Determine the single-ended-output common-mode gain ΔVD1 /ΔVCM. [Hint: You need to take 1/gm into account. ] Fig. 5
*13.46. (a) Draw the differential-mode and common-mode half-circuits for the differential amplifier in Fig. P13.46. . (b) Use the half-circuits to find the Q-points, differential-mode gain, common-mode gain, and differential-mode input resistance for the amplifier if β0 = 150, VCC = 20 V, VEE = 20 V, REE = 100 kΩ, R1 = 1.6 kΩ, and RC = 100 kΩ.
Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns
Q1. A NMOS source-follower circuit is show below. All three transistors used are identical with Vth = 0.5 V and μnCoxW/L = 20 mA/V2. For linear operation, what are the upper and lower limits of the output voltage, and the corresponding inputs. Calculate the average propagation delay of CMOS symmetric inverter shown in the figure below for C = 0.3 pF. Given KN′ = 100 μAV2 and VTN = 0.6 V. 1.2 ns 4.8 ns 3.6 ns 2.4 ns
Figure 3 Figure 3 shows an amplifier with a current mirror as an active load. The MOSFETs have the following parameters: Vtn = −Vt = 0.6 V, kn′ = 200 μA/V2, kp′ = 65 μA/V2, VA(MMOS) = 20 V, VA(PMOS) = −10 V, VT = 26 mV, R1 = 7 kΩ, R2 = 10 kΩ, L = 0.4 μm and W = 4 μm. The base-emitter forward voltage, VBE, of transistor Q4 is 0.7 V. The forward voltage drop for both D1 and D2 is 0.7 V. The supply voltage, VDO = 3 V. Assume the base current of Q4 is negligible compared to the emitter and collector currents of Q4, with all the transistors biased in the active region. a. ) Given that ID = k′(WL)(VGS − Vt)2, calculate the gate to source voltage of Q1. b. ) Calculate the small-signal voltage gain, vout/vin. .
*2. a) Design a type 2 compensated error amplifier (shown in the Figure below) that will give a phase angle at crossover θcomp = 125∘ and a gain of 13 dB for a crossover frequency of 5.5 KHz. (a) (b) Figure 7-23 (a) Type 2 compensated error amplifier; (b) Frequency response. b) A buck converter has a filter transfer function that has a magnitude of - 12 dB and phase angle of 100∘ at 7 kHz. Also, the gain of the PWM circuit is −7 dB. Design a type 2 compensated error amplifier (Fig. 7-23 a) that will give a phase margin of at least 45∘ for a crossover frequency of 7 kHz.
Problem 2: Consider the circuit of Fig. 2. μnCox = 400 μA/V2 μpCox = 200 μA/V2 VDD = 4.0 V VTH,n = 0.4 V |VTH,p| = 0.5 V λn = 0.08 V−1 λp = 0.1 V−1 Assumptions: a. M1 and M3 are identically matched b. M2 and M4 are identically matched Fig. 2 Question 1: Calculate the transistors' aspect ratios such that Vout is set at half the supply rail Question 2: Calculate the currents flowing through both left and right branches from VDD to GND
Determine the values of RD and RS for n-channel JFET shown in figure. The operating point must be maintained at ID = 8 mA and VDS = 7.5 V. The DC supply (VDD) is 15 V. The JFET parameters are IDSS = 15 mA, VP = −5 V. Assume the JFET operates in saturation region. A) RD( in ohm) B) RS( in ohm ) Note : Give your answer upto two decimal Place.
Q) Determine the following: Note that : CG = 0.01 micro F, CC = 0.5 micro F, CS = 2 microF, Rsig = 10 kohm, RG = 1 Mohm, RD = 4.7 kohm, RS = 1 kohm, RL = 2.2 kohm, IDSS = 8 mA, VP = −4 V, VDD = 20 V, Cgd = 2 pF, Cgs = 4 pF, Cds = 0.5 pF, CWi = 5 pF, CWo = 6 pF. (1 point) The value of IDSS is 2.5 mA 0 mA none of the above 2 mA
11.44. Compute the transfer function of the circuit shown in Fig. 11.84 without using Miller's theorem. Assume λ > 0. Figure 11.84
Given the following multistage amplifier circuit. Let Vtn = 0.4 V, Vtp = −0.4 V, kn′ = 400 uA/V2, kp′ = 100 uA/V2, and |VA| = 6 V. The aspect ratios of the MOSFETs are tabulated below. a. Identify the amplifier stages of the circuit and state the functions of the transistor blocks b. For each MOSFET find ID, |Vov|, |VGS|, gm and ro c. With a differential ac voltage vid applied between points A and B, find the voltage gains of each amplifier stage A1 and A2 and the overall voltage gain of the circuit A = vo/vid b. For each MOSFET find ID, |VOV|, |VGS|, gm and ro IQ3 = 100 μA; VOV3 = 0.2 V; VGS3 = 0.6 V; gm3 = 1 mA/V; ro3 = 60 kΩ IQ4 = 100 μA; VOV4 = 0.2 V; VGS4 = 0.6 V; gm4 = 1 mA/V; ro4 = 60 kΩ IQ6 = 200 μA; VOV6 = 0.2 V; VGS6 = 0.6 V; gm6 = 2 mA/V; ro6 = 30 kΩ c. With a differential ac voltage vid applied between points A and B, find the voltage gains of each amplifier stage A1 and A2 and the overall voltage gain of the circuit A = v0 /vid A1 = −30 V/V A2 = −30 V/V Ad = 900 V/V