Given R1 = 6 Ω, R2 = 7 Ω, R3 = 7 Ω, and L = 4 H, for the circuit shown in the figure shown below, determine the output current, i0(t). Assuming an output current in the form io(t) = K1 + K2 e−tτ, enter the value of K2 in mA.
Problem 1: (Wires) In the 0.25 μm technology, wires of metal-5 are found to possess the following characteristics: R = 0.15 Ω/, C′ = (0.15 + 0.05W) fF/μm, where W is the width of the wire in μm. Minimum length transistors in this technology have the following parameters: CGN′ = CGP′ = 2 fF/μm, CDN′ = CDP′ = 1.5 fF/μm, RN′ = 3 kΩμm, RP′ = 6 kΩμm. Figure 1 a) An inverter of size WP = 70 μm and WN = 140 μm drives another (small) inverter as shown in Figure 1(a). The wire from A to B is 2.0 μm wide metal- 5 wire of length 7 mm. Calculate the pull-up delay at node B. Hint: Use the lumped (π)RC wire model described in class. b) If Vin in Figure 1(a) is driven by a 10 MHz periodic signal, what is the total dynamic power dissipation? Hint: The wire capacitance also needs to be charged and discharged. c) Clearly, the 7 mm wire significantly increases the delay. This situation is typical of global signals in large digital ICs e. g. , nodes A and B could be at opposite ends of a large IC. Suppose that the 7 mm wire is broken up into three pieces and the wire segments are driven as shown in Figure 1(b). Now calculate the pull-up delay at from Vin to node B. Hint: Use the lumped (π) RC wire model described in class.
Problem 1: Consider a MOS cascode amplifier with active load in Fig. 1 μnCox = 400 μA/V2 μpCox = 200 μA/V2 NMOS transistors M1 and M2 are matched: (W/L)1 = (W/L)2 = 1 μm/10 nm PMOS transistors M3 and M4 are matched: (W/L)3 = (W/L)4 = 2 μm/10 nm All transistors Are biased to operated in their saturation region. The bias current ID is ID = 2 mA Ignore body effect. λn = λp = 0.05 V−1 Question 1. Calculate the overall equivalent transconductance Fig. 1 Question 2. Calculate the equivalent output resistance Question 3. Calculate the voltage gain
Copy and paste the transistors from the Multisim file "CD4007" to build a CMOS inverter in Multisim. Perform a "DC Sweep" to generate the voltage-transfer characteristic (VTC) of the inverter. Use cursors to find where the VTC slope is -1 and determine the values for the noise margins, NML and NMH (See section 14.2 . 2).
Description In this MULTISIM exercise, you will simulate a common-source (CS) amplifier using an N channel MOSFET You will need to turn in the following in the lab: This document with all the questions answered; Circuit diagram (in multisim); Plots of Vsig , VC and VO obtained from the oscilloscope. You may use "control+print screen" to capture the plots directly from multisim, and then paste it onto a MS word document. EXERCISE: The figure below shows a CS amplifier. X and Y are the input and output terminals, respectively. Here, vsig is the ac signal to be amplified and is a 10 mV (peak), 5 KHz source. Note: For the N Channel MOSFET, you can use 2N7269 or 2SK2553L or ask TA which MOSFET we need to use. For parts (1) through (4), switch OFF V sig. (1) Measure the DC voltages at nodes G, S, D and X.
Note: For each of the BS170 MOSFETs, please use the default model in MultiSim. Please design the R1, R2 and Rc such that the Q point of the MOSFET is VDS = 2.6 V and IDQ = 1.85 mA. Please simulate the circuit and find VGS. Figure 1. NMOS Common-Source AmplifierPlease draw a small signal equivalent circuit and derive the small signal voltage gain of Av. When the amplitude of the AC input to the circuit is 10 mV, what is the amplitude of the output voltage? Please plot the input signal and output signal with time using Multisim simulation and find the voltage gain. Is this an inverting amplifier or non-inverting amplifier? (You can use an Oscilloscope in Multisim). In the simulation, please increase the amplitude of input signal until the output is distorted. What can be the maximum amplitude of the output signal without distortion?
Given the following NMOS (notice the LTspice NMOS figure) amplifier circuit, choose all of the resistor values and the NMOS W/L to meet the following criteria. AV = 8 Rin ≥ 25 kΩ, Rout ≤ 2 kΩW/L ≤ 500 Total power drawn from VDD(1.8 V supply) ≤ 2 mW Minimum undistorted peak to peak output swing ≥ 500 mV (this relates to where you must bias VD) VOV = Vgs−Vth ≥ 200 mV All resistor values must be between 20 Ω and 100 kΩ μCox = 200 μA/V2, Vth = 0.4 V, assume λ = 0, the NMOS device L = 0.18 um, assume the capacitors are very large (act as shorts at the frequencies of interest).
MOS Field-Effect Transistor (MOSFET) 2. Using the simple long-channel model, assuming constant mobility, (a) Plot the ID−VDS characteristics for an n-channel MOSFET with W = 30 μm, L = 2 μm and tox = 35 nm. Take the constant mobility for electrons in the channel to be 450 cm2 /V⋅s. Threshold voltage is VT = +0.80 V. Plot for 0 ≤ VDS ≤ 5 V, and for VGS = 0, 1, 2, 3, 4 and 5 V. Indicate on each curve the VDS (sat) point. (b) Plot ID(sat) −VGS for 0 ≤ VGS ≤ 5 V. (c) Plot ID−VGS for VDS = 0.1 V and for 0 ≤ VGS ≤ 5 V. Use MATLAB or Excel (or other software) to plot the graphs
Modify the MOS_N model VTO and KP values to 1.65 V and 0.05 A/V2, respectively. Take screenshots of all transient analyses for your lab report. Build this circuit, choosing RG2 so that the gate voltage will produce a drain current of ∼20 mA and VD ∼ VDD/2 (a good design goal). RG2 = VGS (actual) = VDS(actual) = ID(actual) = Return the circuit to what you had in Part I, step 1. Calculate the MOSFET transconductance (gm). Read section 7.2 . 1 for appropriate equations. gm(calc) =
A Field Effect Transistor (FET) circuit has a MATLAB plot of the transfer characteristics curve and the bias line as in Figure Q2. Based on the specifications given as follows: VDD = 15 V, VDS = 5.475 V and I1 = I2 = VDD R1+R2 = 16.67 μA; Figure Q2 (a) Design and sketch the Field Effect Transistor (FET) circuit (with bypass capacitor). (10 marks) (b) Determine the value of all resistors. (15 marks) (c) Draw the AC equivalent of the circuit. (4 marks)
USING MATLAB A MOSFET has three modes of operation: cutoff, triode, and saturation. The triode region is also referred to as the linear or quadratic region. The drain current of the n-channel MOSFET (NMOS) is found from the following set of equations: Cutoff: (VGS < VT) ID = 0 Triode: (VCS > VT and VDS < VGS−VT) ID = k[(VGS − VT)VDS − 12 VDS2] Saturation: (VGS > VT and VDS > = VGS − VT) ID = 12 k(VGS − VT)2 where: k is the transconductance parameter (A/V2) VG is the voltage on the gate (V) VD is the voltage on the drain (V) VS is the voltage on the source (typically zero) (V) VT is the threshold voltage (V) From the NTB5860 NL datasheet, we can find: k = 240 AV2 VT = 2.4 V Plot ID versus VDS on a single graph. a. Use the same values for VGS. b. Adjust the graph so that the scale replicates Figure 1 of the datasheet. c. Label the x and y axes the same as Figure 1 of the datasheet. d. Add text within the figure to label the gate voltages.
Given is the sketched MOSFET structure with μ0 = 600 cm2 /Vs, vsat = 107 cm/s, dox = 20 nm, w = 100 μm : a) Use MATLAB to draw the MOSFET output characteristics for VGSmax = 3 V and ΔVGS = 0.5 V and with 0 ≤ VDS ≤ 5 V. Take for Vth = 0 V and an aspect ratio w/L = 10. Write the formulas you are using in your solution. b) Now assume an aspect ratio of 100 . Show the output characteristics for that changed case by using MATLAB.
Using Multisim construct the circuits shown below: Measure the following and record the values in the "results" section: VG, ID, VS, VD, VDS, RESULTS Calculate VGS from the measured values. Which type of biasing is used? The table below shows readings for three different cases where the circuit above, was malfunctioning. Find the fault, assuming only one device in each case has a problem. List the steps taken to arrive at a solution.
Figure Q4 shows a single ended differential amplifier biased with a 1 mA current source which has a 12 kΩ impedance. Assume the transistors used has a β = 100. Answer questions 4.1 to 4.7. Figure Q4 - Questions 4.1 to 4.7 4.1. Calculate the transconductance and transistor input impedance. 4.2. Calculate the amplifiers differential gain (Ad). 4.3. Calculate the differential input impedance of the amplifier. 4.4. Calculate the output impedance of the amplifier. (1) 4.5. Calculate the amplifiers common mode gain. ( Acm).
Consider the circuit in the right, where M1 and M2 operates in saturation with CLM coefficient λ1 and λ2, respectively. Construct the small signal equivalent circuit and determine the small signal voltage gain. (5p)
For the amplifier below, following design information is provided: VDD = 3.3 V, R = 2.4 kΩ, ISS = 1.8 mA, k1 = k2 = 5 mA/V2, VTH,1 = VTH,2 = 0.5 V, λ = 0.1 V−1, γ = 0, ki′ = μ0Cox, ki = μ0 Cox(W L)i. Assume that both transistors are identical and in the saturation region. Finally, NMOS and PMOS bulk terminals are connected to the ground and VDD, respectively. a) What is the DC bias voltage for M1 and M2 given that the voltage drop across ISS is 0.4 V ? You can neglect the channel length modulation, here. Check that the transistors are in the correct operation-mode. b) The resistors will be realized using identical PMOS transistors M3 and M4. If the transistors to be used will have k3 = k4 = 1.5 mA/V2, what will be their overdrive voltages? Check that the transistors are in the correct operation-mode. c) What is the differential voltage gain AV,diff = Vout/Vid in dB ? d) ISS will be realized as a cascode current source. Assume that the voltage drop of 0.4 V is equally shared by the two transistors, M5 and M6 having k5′ = k6′ = 0.5 mA/V2 and VTH, 5 = VTH, 6 = 0.5 V. Assuming the gate voltages of both transistors are 1 V, find the W/L ratios of each device. Once again, you can neglect the channel length modulation here. e) Considering (d), how would the W/L ratios qualitatively change (increase/decrease/stays the same), if γ > 0 ? Explain your reasoning analytically, i. e. , using appropriate equations. f) Using the cascode current source, calculate the common-mode gain of the circuit AV, CM = Vout /Vin in dB, where Vin . s applied to the gates of both M1 and M2. Assume λ = 0.1 V−1 for M5 and M6. g) Calculate the CMRR of the circuit in dB.