For the circuit shown, the supply voltage is VDD = 8 V, the gate voltage is VG = 3.0 V, and the resistor value is R = 400 Ω. The NMOS transistor is characterized by a threshold voltage VT = 0.6 V and a transconductance parameter of k = 4.4 mA/V2. Determine the drain voltage VD and drain current ID.
The following circuit is a common drain amplifier with a p-channel MOSFET. Design this source follower circuit to have a bias current of ISD = 2.5 mA, an output voltage of VO = 10 V with zero input. Determine the values for R1, R2, and RS. (20 points) Given VDD = 20 V, Ri = 4 kΩ and Rin = 200 kΩ. The p-channel transistor has the following characteristics VTH = −2 V, K = 0.8 mA/V2 and λ = 0. Useful formulae: for p-channel MOSFET iSD = K[(vSG−|vTH|)vSD − 12 vsD2] triode region iSD = 12 K(vSG − |VTH|)2(1+λvSD) saturation region