(a) An enhancement n-MOS transistor has the following parameters: Threshold voltage VTh = 0.8 V, K′ = 20 μA/V2 = μnCox, where μn is mobility of electron, Cox gate oxide capacitance. (i) Find W/L ratio for gate voltage VG = 2.8 V, drain voltage, VD = 5 V, source voltage VS = 1 V and drain current ID = 0.24 mA. [6 marks] (ii) Calculate drain current ID for gate voltage VG = 5 V, drain voltage VD = 4 V, source voltage Vs = 2 V [4 marks] (b) For the n-channel EMOSFET used in circuit below, threshold voltage VTh = 1 V, K = 0.3 mA/V2. Find (i) V0 (as shown in figure below) [6 marks] (ii) If V0 = 2 V, find the new K value [4 marks] Fig. 3