The switch in the figure below is open for t < 0 and is then thrown closed at time t = 0. Assume R = 7.00 Ω, L = 5.00 H, and ε = 14.0 V. Find the following as functions of time thereafter. (Do not enter units in your answers. Assume current is in A and time is in s. Use the following as necessary: t.) (a) the current in the inductor (b) the current in the switch i1 =
Due to a weak connection, there is a break in the circuit (shown below) between points a and b. If R1 = 2.23 Ω, R2 = 8.2 Ω, and R3 = 7.95 Ω, and the two batteries ε1 and ε2 have voltages of 8 V and 6.50 V respectively, find the potential difference Vab. Be sure to include the sign of the potential difference.
In the circuit of the figure below, the switch S has been open for a long time. It is then suddenly closed. (Use the following as necessary: E for E, R1, R2, t, and C.) (a) Determine the time constant before the switch is closed. τ = (b) Determine the time constant after the switch is closed. τ = (c) Let the switch be closed at t = 0. Determine the current in the switch as a function of time. I =
Required information NOTE: This is a multi-part question. Once an answer is submitted, you will be unable to return to this part. The switch shown in the circuit below is moved from A to B at t = 0 after being at A for a long time. This places the two capacitors in series, thus allowing equal and opposite dc voltages to be trapped on the capacitors. If V = 150 V, find i(t). (You must provide an answer before moving on to the next part.) The expression of i(t) is Ae−t/B mA, where A = and B = ms.
Consider the circuit shown in the figure below, where L = 4.55 mH and R2 = 475 Ω. The switch S can be positioned at either a or b. (a) When the switch is at position a, the time constant is 14.7 μs. What is R1 (in kΩ)? kΩ (b) What is the current in the inductor at the instant the switch is thrown to position b? mA
Calculate v(t) for t > 0. Your answer will be in the form of v(t) = Xe−Yt. Find X and Y. Then calculate i(t) for t > 0. Your answer will be in the form of i(t) = We−Zt. Find W and Z.
Consider an n-channel MOSFET with the following parameters: W = 30 μm, L = 2 μm, μn = 450 cm2 V⋅s2, tox = 350 Å VTN = 0.8 V, εox = 3.9×8.854×10−14 F/cm The gate terminal is connected to the drain terminal (VGD = 0). The source terminal and the body terminal are both connected to ground. a) (5 points) What happens when VDS is less than 0? b) (10 points) Determine the range of VDS over which the transistor is biased in the saturation region. Assume the maximum VDS is 5 V. c) (5 points) Determine the current when i) VDS = 0.6 V ii) VDS = 4 V c) (5 points) Plot ID versus VDS for 0 ≤ VDS ≤ 5 V
5.93. Consider the self-biased stage shown in Fig. 5.168. (a) Determine the bias conditions of Q1. (b) Select the value of C1 such that it operates as nearly a short circuit (e. g., |VP/Vin| ≈ 0.99) at 10 MHz. (c) Compute the voltage gain of the circuit at 10 MHz. (d) Determine the input impedance of the circuit at 10 MHz. (e) Suppose the supply voltage is provided by an aging battery. How much can VCC fall while the gain of the circuit degrades by only 5%? Figure 5.168
In the differential stage above, IBIAS = 1 μA, RC = 50 kΩ and Rsig = 50 kΩ. Cμ = 0.2 pF, Cπ = 0.33 pF, and β = 200 for all the transistors. You can neglect ro and rx. a) Calculate gm for the transistors in mA/V. b) Calculate the differential gain Ad = V0 Vsig of the stage in V/V. c) Use the open-circuit time constant method to estimate the frequency in MHz at which the differential gain drops by 3 dB relative to its DC value.