Design a 2-input CMOS Schmitt NOR gate (Draw the designed circuit and show all MOSFET sizes) that satisfies the following requirements: Input down trip voltage is equal to 2/3 VDD and input up trip is equal to 1/3 VDD Minimum input gate capacitance for each input Output drive strength is equal to a symmetrical inverter with WN/LN = 4 μm/2 μm The design should yield a reasonable propagation delay Use channel lengths of 2 μm for all MOSFETs. Assume KN′ = 40 μA/V2, KP′ = 16 μA/V2, VTN = 1 V, VTP = −1 V, and VDD = 5 V.
A dependent source is controlled by other current or voltage in the circuit. There is a current-dependent voltage source on the left branch of the circuit below. This means that the magnitude of the dependent voltage source is a function of the current ib. In this case, the magnitude of the dependent voltage source (in volts) is the magnitude (no units) of the of the current ib divided by 4. What is the value of vg required for the interconnection to be valid? What is the power associated with the current source?
A very long straight wire of radius a carries a uniform distributed current I. An electron of charge −e and mass m escapes in a perpendicular direction from the surface of wire with velocity u. (a) Show that the electron shall finally return to the wire. (b) Find the maximum distance of electron from the axis of wire during its journey.