Consider the common source MOSFET circuit in Fig. (4). For this circuit, V+ = 5 V, V− = −5 V, kn = 2 mA/V2, RD = 1 kΩ, RSS = 2 kΩ, IDQ = 0.1 mA, and with these parameters, the transistor is operating in the saturation regime. We are also given our higher-cutoff frequency: ωH = 1×105 rad/sec. If we are allowed to select a capacitance value of C1 in the range: 1 nF ≤ C1 ≤ 0.1 μF, what is the maximum bandwidth allowed for this design? (You may assume ωL = ωC1). Figure 4
A ring of charge is centered on the origin and lies in the yz plane, as shown in the figure. The ring has a charge density of λ = 5.46×10−6 C/m and a radius of R = 3.41 cm. The Coulomb force constant is k = 1 /(4πϵ0) = 8.99×109 N⋅m2 /C2 Determine magnitude E of the ring's electric field at the point P(x, y) = (2.25 m, 0.00 m). E = N/C Derive the expression for the electric field magnitude E∞ of the ring as the point P moves very far from the ring along the x axis, i. e., x≫R. E∞ = Enter your expression in terms of given quantities.