Assume VDD = 5 V, VTNN = 0.8 V, |VTHP| = 0.8 V, KPn = 46 μA/V2, KPp = 15 μA/V2, the minimum MOS channel length = 2 μm, (1) In a CMOS inverter design, NMOS transistor has a size (W/L) 10 μm/2 μm, calculate the PMOS size to set the switching point or the inverter threshold at around 2.25 V. (2) Calculate the equivalent resistance of NMOS and PMOS transistors in the CMOS inverter you designed. (3) If the total equivalent output capacitance is 100 fF in your CMOS inverter, calculate tpHL and tpLH. (4) What is the dynamic power consumption of your inverter if a 50 MHz clock is feed into your inverter? (Assume the total equivalent output capacitance is 100 fF) (5) If 1×106 of your inverters are integrated on a chip and all inverters are driven by 100 MHz clock, what is the dynamic power consumption of this chip? (Assume the total equivalent output capacitance of each inverter is 100 fF)
The circuit below is a 2-input NAND gate circuit, a and b are input signals, please draw the truth table of this 2-input NAND circuit and make the circuit complete.
A circuit using a p-channel MOSFET is shown below. The MOSFET parameters are shown next to the circuit diagram. MOSFET Parameters Vt = 1 V Kp = μpCoxW/L = 2.22×10−3 A/V2 VA = 250 V a. What is the dc operating point VSDQ and IDQ? b. What are the values of gm and ro of the MOSFET?
Bias a CS NMOS amplifier in a 1 μm CMOS process described by μnCox = 0.1 mA/V, Vt = 0.5 V and λn′ = 2×10−7 m/V such that its output is set at 1.65 V. Assume a 3.3 V supply level and that the source terminal is set at 0 V. Ensure that the device is operating in its saturation region. Verify your result using SPICE.
Consider the following figure. (a) Find the equivalent capacitance between points a and b for the group of capacitors connected as shown in the figure above. Take C1 = 2.00 μF, C2 = 15.0 μF, and C3 = 6.00 μF, μF (b) What charge is stored on C3 if the potential difference between points a and b is 60.0 V? μC
Find the equivalent capacitance of the group of capacitors shown in the figure below. (Let C1 = 5.30 μF, C2 = 3.50 μF C3 = 3.10 μF, C4 = 1.90 μF, C5 = 2.80 μF, C6 = 7.10 μF, C7 = 6.30 μF.) μF
(a) What is the equivalent capacitance (in μF) of the group of capacitors shown in the figure below? μF (b) What If? What is the equivalent capacitance (in μF) of the group of capacitors if the spaces between the plates of all of the capacitors are filled with glass, which has a dielectric constant of 5.60? μF
Find the following. (In the figure use C1 = 15.40 μF and C2 = 9.40 μF.) (a) the equivalent capacitance of the capacitors in the figure above μF (b) the charge on each capacitor on the right 15.40 μF capacitor μC on the left 15.40 μF capacitor μC on the 9.40 μF capacitor μC on the 6.00 μF capacitor μC (c) the potential difference across each capacitor on the right 15.40 μF capacitor V on the left 15.40 μF capacitor V on the 9.40 μF capacitor V on the 6.00 μF capacitor V
A spherical capacitor is made up of two concentric spheres of radii R1 = 18 cm and R2 = 24 cm carrying a charge of Q = 380 pC. a) What is in Farads the capacitance of this capacitor? C = b) What is in Volts the potential difference between the spheres? V = c) How much energy is stored then in the capacitor? U =