Consider a Si-based enhancement-type n-channel MOSFET with the following parameters: Substrate doping concentration: NA = 3.15×1016 cm−3, channel length: L = 0.18 μm, gate width: W = 18 μm, electron mobility: μn = 900 cm2 /Vs; oxide thickness: tox = 8 nm, oxide dielectric constant = 3.9. Bandgap energy and Electron Affinity of the oxide are 9.0 eV and 1.0 eV, respectively. Work function of the gate metal is 4.977 eV. Assume no fixed surface state charge in the oxide or oxidesemiconductor interface. (a) Calculate the surface potential at strong inversion. (b) What is the work function of the semiconductor? (c) Calculate the Flatband voltage. (d) Calculate the threshold voltage. (e) What voltage do you need to apply at the drain (VDS) to pinch-off the channel when the Gate voltage (VGS) is 6 V? (f) Calculate the sheet electron concentration (ns) in the channel at the source end and the drain end at pinch-off. (g) Draw the band diagram of the MOSFET at zero gate bias. Mark all energy level values.