In the current mirror shown in fig. 2, all the MOSFETs are to be operated in saturation region with overdrive voltage of 0.2 V. Take μpCox = 200 μA/V2 (a) Find the IREF value at which this current mirror works best if R = 20 kΩ. (b) Design the current mirror to obtain IO = 20 μA. (c) What is the maximum voltage possible at node X for this current mirror to work well, if Vdd = 1.8 V?
Consider a n-channel MOSFET where the 2 points lateral and vertical dimensions (W, L) are reduced by 30%, and both the supply voltage VDD and threshold voltage Vth are also reduced by 30%. When this transistor is connected to a load capacitor it is found that the capacitance and delay are reduced by 30%. Then the dynamic power dissipation reduces by (in %)? 51 30 70 42
Which equation is correct about the Vout in the figure below: (Choose all the correct answers) Vout Vout = |Vtp| Vout = -Vtp Vout = VDD − Vtp Vout = 2|Vtp| Vout = VDD − |Vtp|
Calculate the output high voltage, the output low voltage, and hence the voltage swing for a 2:1 and a 4:1 nMOS inverter where the pull-up device is an nMOS depletion mode transistor. VDD is 5 V, Vtn = 1 V, Vtdep = −3 V. Assume that Vin(Hi) = VDD, Vin(Lo) is below Vtn. Why does logic degradation occur at the output?