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(15 points) MOSFETs operation (The values may be changed in the real exam) One curve of an n-channel MOSFET is characterized by the following parameters: ID(Sat) = 2×10−4 A, VDS(sat) = 4 V, and VT = 0.8 V. (a) What is the gate voltage? (b) If VGS = 2 V and VDS = 2 V, determine ID. (c) If VGS = 3 V and VDS = 1 V, determine ID. For saturation region, ID = WμnCox2L(VGS − VT)2

(15 points) MOSFETs operation (The values may be changed in the real exam) One curve of an n-channel MOSFET is characterized by the following parameters: ID(Sat) = 2×10−4 A, VDS(sat) = 4 V, and VT = 0.8 V. (a) What is the gate voltage? (b) If VGS = 2 V and VDS = 2 V, determine ID. (c) If VGS = 3 V and VDS = 1 V, determine ID. For saturation region, ID = WμnCox2L(VGS − VT)2

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(15 points) MOSFETs operation (The values may be changed in the real exam) One curve of an n-channel MOSFET is characterized by the following parameters: I D ( S a t ) = 2 × 10 − 4 A , V D S ( s a t ) = 4 V , and V T = 0.8 V . (a) What is the gate voltage? (b) If V G S = 2 V and V D S = 2 V , determine I D . (c) If V G S = 3 V and V D S = 1 V , determine I D . For saturation region,
I D = W μ n C n x 2 ( V G S − V T ) 2

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