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(20 points) Device Level For the Figure 1 is cross section view of an MOS device. (a) What type is this device (NMOS or PMOS)? (b) Considering the potential of each terminal in this figure, determine Source, Drain, Gate, and Substrate terminals and label them on the diagram. (c) Assuming that |Vt| = 0.5 V. Find the region of operation of the device. Ignore body effect. (d) Determine drain current if |K′| = 100 μA/V2, (W/L) = 10, and |λ| = 0.1 V−1. (f) Draw depletion region and the channel on the diagram.

(20 points) Device Level For the Figure 1 is cross section view of an MOS device. (a) What type is this device (NMOS or PMOS)? (b) Considering the potential of each terminal in this figure, determine Source, Drain, Gate, and Substrate terminals and label them on the diagram. (c) Assuming that |Vt| = 0.5 V. Find the region of operation of the device. Ignore body effect. (d) Determine drain current if |K′| = 100 μA/V2, (W/L) = 10, and |λ| = 0.1 V−1. (f) Draw depletion region and the channel on the diagram.

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  1. (20 points) Device Level For the Figure 1 is cross section view of an MOS device. (a) What type is this device (NMOS or PMOS)? (b) Considering the potential of each terminal in this figure, determine Source, Drain, Gate, and Substrate terminals and label them on the diagram. (c) Assuming that | V t | = 0.5 V . Find the region of operation of the device. Ignore body effect. (d) Determine drain current if | K ′ | = 100 μ A / V 2 , ( W / L ) = 10 , and | λ | = 0.1 V − 1 . (f) Draw depletion region and the channel on the diagram.

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Device Level A cross section view of an MOS device is shown in Figure 1. (a) What type is this device (NMOS or PMOS)? (b) Considering the potential of each terminal in this figure, determine Source, Drain, Gate, and Substrate terminals and label them on the diagram. (c) Assuming that |Vt| = 0.5 V and VDSat = 1 V. Find the region of operation of the device (cutoff, linear, saturation, or velocity saturation). Ignore body effect. (d) Determine drain current if |K′|(W/L) = 1 mA/V2, (W/L) = 10, and |λ| = 0.1 V−1. Figure 1 Biased MOSFET Transistor

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