Question

Notify Me Bookmark

5.1 Design a resistive-load inverter with R = 1 kΩ, such that VOL = 0.6 V. The enhancement-type nMOS driver transistor has the following parameters: VDD = 5.0 V VT0 = 1.0 V γ = 0.2 V1/2 λ = 0 μnCox = 22.0 μA/V2 (a) Determine the required aspect ratio, W/L. (b) Determine VIL and VIH. (c) Determine noise margins NML and NMH.

5.1 Design a resistive-load inverter with R = 1 kΩ, such that VOL = 0.6 V. The enhancement-type nMOS driver transistor has the following parameters: VDD = 5.0 V VT0 = 1.0 V γ = 0.2 V1/2 λ = 0 μnCox = 22.0 μA/V2 (a) Determine the required aspect ratio, W/L. (b) Determine VIL and VIH. (c) Determine noise margins NML and NMH.

Image text
5.1 Design a resistive-load inverter with R = 1 k Ω , such that V O L = 0.6 V . The enhancement-type nMOS driver transistor has the following parameters:
V D D = 5.0 V V T 0 = 1.0 V γ = 0.2 V 1 / 2 λ = 0 μ n C o x = 22.0 μ A / V 2
(a) Determine the required aspect ratio, W / L . (b) Determine V I L and V I H . (c) Determine noise margins N M L and N M H .

Detailed Answer

3 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (3)
  • Correct answers (3)
  • Complete solution (3)
  • Step-by-step solution (3)
  • Fully explained (3)

Similar/Related Questions

Q3. Consider the pseudo-NMOS inverter of which the transistors have the following parameters:μnCox = 4μpCox = 160 μA/V2, ∣γ| = 0.5 V1/2, 2Φf = 0.5 V, λ = 0.001 V−1, Vtno = 0.6 V, Vtpo = −0.8 V, and (W/L)p = 1. The supply voltage VDD = 3.3 V. The capacitive load at the output node is 20 pF. The input voltage Vin is expected to be a perfect periodic square wave with full swing (low level : 0 V, high level: VDD). (a) Determine (W/L)n so that the low voltage level of the output signal Vo will not higher than 0.4 V. (b) Based on the result of (a), calculate the static current of the circuit when Vi = VDD. (c) Based on the result of (a), estimate the time required for Vo to change from 0.8 VDD to 0.2VDD.
Solution
0 0

7.12 The enhancement-type MOS transistors have the following parameters: VDD = 5 V VT0 = 1.0 V for both nMOS and pMOS transistor λ = 0.0 V -1 μpCox = 20 μA/V2 μnCox = 50 μA/V2 For a CMOS complex gate OAI432 with (W/L)p = 30 and (W/L)n = 40, (a) Calculate the W/L sizes of an equivalent inverter with the weakest pull-down and pull-up. Such an inverter can be used to calculate worst-case pull-up and pull-down delays, with proper incorporation of parasitic capacitances at internal nodes into the total load capacitance. In this problem, you are asked to calculate only (W/L) worse - case for both p-channel and n-channel MOSFETs by neglecting the parasitic capacitances.

Solution
1 0

(a) When the transistor is biased with VG = 2.8 V, VD = 5 V, Vs = 1 V, and VB = 0 V, the drain current is ID = 0.24 mA. Determine W/L. (b) Calculate ID for VG = 5 V, VD = 4 V, VS = 2 V, and VB = 0 V. (c) If un = 500 cm2/Vs and Cg = CoxWL = 1.0 x 10-15 F, find W and L. An enhancement-type nMOS transistor has the following parameters: VT0 = 0.8V y = 0.2 V1/2 lambda = 0.05 V-1 |2phif| = 0.58 V k
Solution
1 0