7.75. The source follower of Fig. 7.97 employs a bias current source, M2. (a) What value of Vin places M2 at the edge of saturation? (b) What value of Vin places M1 at the edge of saturation? (c) Determine the voltage gain if Vin has a dc value of 1.5 V. (d) What is the change in the gain if Vb changes by ±50 mV ? Figure 7.97 In the following problems, unless otherwise stated, assume μnCox = 200 μA/V2, μpCox = 100 μA/V2, λ = 0, and VTH = 0.4 V for NMOS devices and −0.4 V for PMOS devices.

7.75. The source follower of Fig. 7.97 employs a bias current source, M2. (a) What value of Vin places M2 at the edge of saturation? (b) What value of Vin places M1 at the edge of saturation? (c) Determine the voltage gain if Vin has a dc value of 1.5 V. (d) What is the change in the gain if Vb changes by ±50 mV ? Figure 7.97 In the following problems, unless otherwise stated, assume μnCox = 200 μA/V2, μpCox = 100 μA/V2, λ = 0, and VTH = 0.4 V for NMOS devices and −0.4 V for PMOS devices.

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In the following problems, unless otherwise stated, assume μ n C o x = 200 μ A / v 2 , μ p C o x = 100 μ A / V 2 , λ = 0 , and V T H = 0.4 V for N M O S devices and 0.4 V for PMOS devices. 7.75. The source follower of Fig. 7.97 employs a bias current source, M 2 . (a) What value of V i n places M 2 at the edge of saturation? (b) What value of V in places M 1 at the edge of saturation? (c) Determine the voltage gain if V i n has a dc value of 1.5 V . (d) What is the change in the gain if V b changes by ± 50 m V ? Figure 7.97

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