7. Analyze the circuit to find the value of current I. Here, use the Method of Assumed State using the CVD model of diode with Vdo = 0.7 V. Validate your assumptions about the states of the diodes. (CO2)[10]
Image text
7. Analyze the circuit to find the value of current I. Here, use the Method of Assumed State using the CVD model of diode with Vdo = 0.7 V. Validate your assumptions about the states of the diodes. (CO2)[10]
![7. Analyze the circuit to find the value of current I. Here, use the Method of Assumed State using the CVD model of diode with Vdo = 0.7 V. Validate your assumptions about the states of the diodes. (CO2)[10]](https://www.doubtrix.com/uploads/editor/7062596268UDIFoNdmwo.png)
![Refer to the Circuit above. For the MOSFET, VT = 1 V and k = kn’W/L = 4 mA/V2. (a) Identify the value of the gate voltage vG and the drain-source current iDS. (b) Calculate the value of the drain voltage vD using the 1 kΩ resistor. (c) Analyze the circuit to find vS. Here, use the Method of Assumed State. You must validate your assumptions. [Hint: assume vS = x]](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1702192202-Bzxfhgierhzxgfogaf.png)
![The figure below shows a circuit that consists of two BJTs. Both transistors Q1 and Q2 are constructed with similar geometry and design parameters. The supply voltage, Vcc = 7 V, and the value of the resistor, R, is 6.3 kohm. Assume all the transistors are biased in the active region with similar current gain, B = 100, and base-emitter voltage, VBE = 0.7 V. (a) State the type of the circuit shown above. [3 marks] (b) State one disadvantage of using BJT compared to MOSFET in this application. [3 marks] (c) Determine the collector current of transistor Q2. [5 marks] (d) Determine the collector current of transistor Q1. [4 marks] (e) Explain the cause of the mismatch between the input reference current, IR, and the output current, IC1. [5 marks] (f) Suggest a circuit topology that reduces the mismatch between the input reference current and the output current. Sketch and label the suggested circuit. Use only BJTs in your proposed circuit. [5 marks]](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1695265632-Q288.png)
![For the circuit shown in Figure 1, NMOS device M1 has the following properties: kn’(W/L) = 180 μA/V2, VT0 = 2 V, λ = 0.02 V-1, γ = 0.4 V1/2, 2ϕF = 0.7 V, and ID = 10 mA. Note that capacitor Cbig is a DC blocking cap, i.e., Cbig is an open at DC and a short at all other frequencies. Figure 1. Circuit for Problem 1. a) Determine the numerical value of bias voltage Vbias which is needed to achieve a drain current of ID = 10 mA. b) Draw the small-signal equivalent circuit. c) Analyze the small-signal circuit to find Rin, Rout, and Av = Vout/Vin. Find the analytic expression for each quantity first, before determining the numerical answers. d) Recall that gmb/gm = χ. Determine the numerical value of χ for this problem. [Note that this part has nothing to do with parts (b) and (c).] e) What is the threshold voltage of device M1? [Note that this part has nothing to do with parts (b) and (c).] Show your work, list all numerical values in proper engineering notation format with appropriate units and with at least two decimal places of precision.](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1701531864-Rjgbdog0ehds.png)