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A 0.18-μm fabrication process is specified to have tox = 4 nm, μn = 450 cm2/V⋅s, and Vthn = 0.5 V. The dielectric constant of the silicon dioxide is 3.9. Find the value of the process transconductance parameter. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance rDS of 1 kΩ at vGS = 1 V. Ans. 388 μA/V2; 0.93 μm.

A 0.18-μm fabrication process is specified to have tox = 4 nm, μn = 450 cm2/V⋅s, and Vthn = 0.5 V. The dielectric constant of the silicon dioxide is 3.9. Find the value of the process transconductance parameter. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance rDS of 1 kΩ at vGS = 1 V. Ans. 388 μA/V2; 0.93 μm.

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A 0.18 − μ m fabrication process is specified to have t o x = 4 n m , μ n = 450 c m 2 / V ⋅ s , and V t h n = 0.5 V . The dielectric constant of the silicon dioxide is 3.9. Find the value of the process transconductance parameter. For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance r D S of 1 k Ω at v G S = 1 V . Ans. 388 μ A / V 2 ; 0.93 μ m .

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Consider an NMOS transistor fabricated in a 0.18-um process with L = 0.18 um and W = 2 um. The process technology is specified to have tox = 4nm, un = 450 cm^2/V-s and Vtn = 0.5V. Find the current ID and VDS considering the MOSFET is working at the boundary of saturation region with VGS = 0.72V. Now it is observed that if VDS increases MOSFET current ID also increases to a value of 200uA due to a change in channel length, determine the new length of the channel.
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For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V;VTn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and Vp = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that vX = VY. 1 point determine the output resistance of this circuit ∂Vp/∂Iout in MΩ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kQ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT} Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

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For all circuits, do not consider channel length modulation for calculating bias points. Unless otherwise specified, channel length modulation effect needs to be considered for small-signal analysis. All answers should be given to the second decimal place. Circuit and device parameters are: Vdd = 5 V; VTnn = VTp = 1 V; μnCox = 50 μA/V2; μpCox = 25 μA/V2; λn = λp = 0.01 V−1; Lmin = 1 μm Figure 1 (for problems 1-3) Figure 2 (for problems 5-9) Figure 1: Transistor M1 has (W/L) = (160 μm/2 μm) and a bias current Iout = 2 mA. We desire M1 to be in saturation. You should assume λn = 0 for problems (1)-(3). Determine the ratio R1 /R2 required. 1 point Let VTn increase by 10% to 1.1 V. What is the new value of Iout in mA ? 1 point Let μnCox increase by 10% to 55 μA/V2. What is the new value of Iout in mA ? 1 point Figure 2: The circuit has Iref = 2 mA and VP = 4 V. Transistors M1, M2 and M3 have (W/L) = (80 μm/1 μm). Determine the value of vx. (in volts) 1 point Determine the minimum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine the maximum allowable value of Vb (in volts) such that all devices are in saturation. 1 point Determine Vb (in volts) such that VX = VY. 1 point determine the output resistance of this circuit ∂Vp/Iout in MQ. 1 point Description for questions 9-10: An NMOS device with ID = 1 mA must operate in saturation with drain-source voltages as low as 0.5 V. The minimum required small-signal output impedance is 400 kΩ. {Hint: You need to use the relations: rout = 1 /(λ⋅ID); λ⋅L = constant; and expression for VDS, sat = VGS−VT }Determine the length of the device in μm. 1 point Determine the width of the device in μm. 1 point

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