A 5-µm-long block of p-type silicon has an acceptor doping profile given by NA(x) = 10^14 + 10^18 exp(-10^4x), where x is measured in cm. Use Eq. (2.17) to demonstrate that the material must have a nonzero internal electric field E. What is the value of E at x = 0 and x = 5 µm? (Hint: In thermal equilibrium, the total electron and total hole currents must each be zero.)

A 5-µm-long block of p-type silicon has an acceptor doping profile given by NA(x) = 10^14 + 10^18 exp(-10^4x), where x is measured in cm. Use Eq. (2.17) to demonstrate that the material must have a nonzero internal electric field E. What is the value of E at x = 0 and x = 5 µm? (Hint: In thermal equilibrium, the total electron and total hole currents must each be zero.)

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A 5-µm-long block of p-type silicon has an acceptor doping profile given by NA(x) = 10^14 + 10^18 exp(-10^4x), where x is measured in cm. Use Eq. (2.17) to demonstrate that the material must have a nonzero internal electric field E. What is the value of E at x = 0 and x = 5 µm? (Hint: In thermal equilibrium, the total electron and total hole currents must each be zero.)

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