a) A MOSFET current source shown in Figure 2 has the following parameters: VTP = −0.4 V, kP′ = 60 μA/V2, (W/L)1 = 25, (W/L)2 = 15, (W/L)3 = 5 Determine the value of resistor R such that transistor M2 is biased at the edge of saturation region (where VSD2 = VSD(SAT)). Figure 2 b) After a design review, a senior design engineer has suggested to increase the output resistance (Ro) by adding ONE additional transistor. Modify the current source in Figure 2 to meet this requirement. Name the circuit, sketch and clearly label all components.