(a) An enhancement n-MOS transistor has the following parameters: Threshold voltage VTh = 0.8 V, K′ = 20 μA/V2 = μnCox, where μn is mobility of electron, Cox gate oxide capacitance. (i) Find W/L ratio for gate voltage VG = 2.8 V, drain voltage, VD = 5 V, source voltage VS = 1 V and drain current ID = 0.24 mA. [6 marks] (ii) Calculate drain current ID for gate voltage VG = 5 V, drain voltage VD = 4 V, source voltage Vs = 2 V [4 marks] (b) For the n-channel EMOSFET used in circuit below, threshold voltage VTh = 1 V, K = 0.3 mA/V2. Find (i) V0 (as shown in figure below) [6 marks] (ii) If V0 = 2 V, find the new K value [4 marks] Fig. 3

(a) An enhancement n-MOS transistor has the following parameters: Threshold voltage VTh = 0.8 V, K′ = 20 μA/V2 = μnCox, where μn is mobility of electron, Cox gate oxide capacitance. (i) Find W/L ratio for gate voltage VG = 2.8 V, drain voltage, VD = 5 V, source voltage VS = 1 V and drain current ID = 0.24 mA. [6 marks] (ii) Calculate drain current ID for gate voltage VG = 5 V, drain voltage VD = 4 V, source voltage Vs = 2 V [4 marks] (b) For the n-channel EMOSFET used in circuit below, threshold voltage VTh = 1 V, K = 0.3 mA/V2. Find (i) V0 (as shown in figure below) [6 marks] (ii) If V0 = 2 V, find the new K value [4 marks] Fig. 3

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Question 3 (20 marks) (a) An enhancement n-MOS transistor has the following parameters: Threshold voltage V T h = 0.8 V , K = 20 μ A / V 2 = μ 0 C o x , where μ 0 is mobility of electron, Cox gate oxide capacitance. (i) Find W / L ratio for gate voltage V G = 2.8 V , drain voltage, V D = 5 V , source voltage V S = 1 V and drain current I D = 0.24 m A . [6 marks] (ii) Calculate drain current ID for gate voltage V G = 5 V , drain voltage V D = 4 V , source voltage V s = 2 V [4 marks] (b) For the n-channel EMOSFET used in circuit below, threshold voltage V T h = 1 V , K = 0.3 m A / V 2 . Find (i) V 0 (as shown in figure below) [6 marks] (ii) If V 0 = 2 V , find the new K value [4 marks] Fig. 3

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