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a) Design the op amp given in the figure, and present the parameters (Vin, CM, Vbl, Vb2, (W/L)1−8, and ISS) of your design for the following requirements: Supply voltage = 3 V Maximum differential swing = 2.4 V Total power dissipation = 6 mW M1−M8 parameters μn = 350 cm2 /V/s μp = 100 cm2 /V/s Cox = 383.6 nF/cm2 VTN = 0.7 VVTP = −0.8 Vγ = 0 λ = 0

a) Design the op amp given in the figure, and present the parameters (Vin, CM, Vbl, Vb2, (W/L)1−8, and ISS) of your design for the following requirements: Supply voltage = 3 V Maximum differential swing = 2.4 V Total power dissipation = 6 mW M1−M8 parameters μn = 350 cm2 /V/s μp = 100 cm2 /V/s Cox = 383.6 nF/cm2 VTN = 0.7 VVTP = −0.8 Vγ = 0 λ = 0

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a) Design the op amp given in the figure, and present the parameters (Vin, CM, Vbl, Vb2, (W/L)1−8, and ISS) of your design for the following requirements: Supply voltage = 3 V Maximum differential swing = 2.4 V Total power dissipation = 6 mW M1−M8 parameters μn = 350 cm2 /V/s μp = 100 cm2 /V/s Cox = 383.6 nF/cm2 VTN = 0.7 VVTP = −0.8 Vγ = 0 λ = 0

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Problem 2. Differential amplifier - current source load For the circuit in Fig. 2 (assume γ = 0), (b) Calculate minimum common-mode input, Vin, CM, if ISS requires at least 0.4 V across it. (c) For this value of Vin, CM , calculate maximum output voltage, Vout1,max and minimum output voltage Vout1,min that keeps transistors in saturation. Figure 2: Problem 2 NMOS: W = 10 μm, L = 0.5 μm, κn = 140 μA/V2, tox = 9 nm, μ0 = 350 cm2 /V/s, ϕ = 2ϕF = 0.9 V, Vt0 = 0.7 V, λ = 0.1 V−1( at L = 0.5 μm) and γ = 0.45(V). PMOS: W = 10 μm, L = 0.5 μm, κn = 40 μA/V2, tox = 9 nm, μ0 = 100 cm2 /V/s, ϕ = 2ϕF = 0.8 V, Vt0 = −0.8 V, λ = 0.2 V−1( at L = 0.5 μm) and γ = 0.4(V).

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