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A. Determine the value of the oxide capacitance (Cox). B. Determine the value of total junction capacitance (Cj). C. Total overlap capacitance (Cov). D. Determine the zero-bias value of the: Gate-Source capacitance (CGS), Gate-Drain capacitance (CGD) and the Gate-Body capacitance (CGB). E. Repeat D when the MOSFET is in saturation region. F. Repeat D when the MOSFET is in Linear region. 0.25 μm technology Cjo = 3 mF/m2 Cjswo = 0.275 n F/m.

A. Determine the value of the oxide capacitance (Cox). B. Determine the value of total junction capacitance (Cj). C. Total overlap capacitance (Cov). D. Determine the zero-bias value of the: Gate-Source capacitance (CGS), Gate-Drain capacitance (CGD) and the Gate-Body capacitance (CGB). E. Repeat D when the MOSFET is in saturation region. F. Repeat D when the MOSFET is in Linear region. 0.25 μm technology Cjo = 3 mF/m2 Cjswo = 0.275 n F/m.

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0.25 μ m technology C j o = 3 m F / m 2 C j s w o = 0.275 n F / m . A. Determine the value of the oxide capacitance (Cox). B. Determine the value of total junction capacitance ( C j ) . C. Total overlap capacitance (Cov). D. Determine the zero-bias value of the: Gate-Source capacitance (CGS), Gate-Drain capacitance (CGD) and the Gate-Body capacitance (CGB). E. Repeat D when the MOSFET is in saturation region. F. Repeat D when the MOSFET is in Linear region.

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