A diode is doped with NA = 10^18/cm3 on the p-type side and ND = 10^19/cm3 on the n-type side. (a) What is the depletion-layer width wdo? (b) What are the values of x p and xn? (c) What is the value of the built-in potential of the junction? (d) What is the value of EMAX? Use Eq. (3.3) and Fig. 3.5.
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A diode is doped with NA = 10^18/cm3 on the p-type side and ND = 10^19/cm3 on the n-type side. (a) What is the depletion-layer width wdo? (b) What are the values of x p and xn? (c) What is the value of the built-in potential of the junction? (d) What is the value of EMAX? Use Eq. (3.3) and Fig. 3.5.
![Q6. For the amplifier circuit shown in Fig. Q6, the MOS Transistor Ml has the following parameters: Kn = 1 mAV−2, and VTHN = 1 V. MOS transistors M2 and M3 are identical and have the following parameters: Kp = 1 mAV−2, and VTHP = −1 V. Fig. Q6 (a) Perform the DC analysis of the amplifier circuit shown in Fig. Q6, and show that the DC gate voltage of Ml is 5 V. You need to explain briefly your answer. (b) Calculate the value of RS such that the drain current of MI is 4 mA. Verify that the Ml is operating in the saturation region. [ Ans: Rs = 0.5 kΩ] (c) Calculate the parameters, gm and ro, of the small-signal model of the transistor Ml. [Ans: gm, M1 = 4 mAV−1, and ro, M1 = ∞ ] (d) What is the configuration of this amplifier? (e) Calculate the values of Rin , and Rout . [Ans: Rin = 5 kΩ and Rout = 2 kΩ ] (f) Estimate the voltage gain, Av( = vout /vin ). [ Ans: AV = −1.78]](https://www.doubtrix.com/uploads/editor/9864219624emwVzDjyOi.png)
