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A DRAM cell uses a storage capacitor of 38 fF, VDD = 2.5 V and VT = 0.5 V for the NMOS access FET. If the bit line capacitance is 210 fF, the sense amp can detect voltages down to 19 mV as a valid one, and the memory is refreshed every 1 μsec, what is the maximum leakage current that can be tolerated in nanoamps? Answer: Check

A DRAM cell uses a storage capacitor of 38 fF, VDD = 2.5 V and VT = 0.5 V for the NMOS access FET. If the bit line capacitance is 210 fF, the sense amp can detect voltages down to 19 mV as a valid one, and the memory is refreshed every 1 μsec, what is the maximum leakage current that can be tolerated in nanoamps? Answer: Check

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A DRAM cell uses a storage capacitor of 38 f F , V D D = 2.5 V and V T = 0.5 V for the NMOS access FET. If the bit line capacitance is 210 f F , the sense amp can detect voltages down to 19 m V as a valid one, and the memory is refreshed every 1 μ s e c , what is the maximum leakage current that can be tolerated in nanoamps?
Answer: ◻ Check

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