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a. In the given circuit, the MOSFET operates based on the model iD = K(vGS − Vt)^2, as long as vds ≥ vGS−VT, where K is 1.16 milli-siemens per volt, and VT = 0.6 volts. The resistances R1 and R2 are 590 kilo-ohms and 100 kilo-ohms, respectively. What is the maximum value of RD for which the device is in saturation? Provide your answer in kilo-ohms. b. In the given circuit, assuming RD = 4 5 kilo-ohms, what is the maximum current iD that can flow through the device while ensuring the device remains in saturation? For this question, disregard the earlier values of R1 and R2.

a. In the given circuit, the MOSFET operates based on the model iD = K(vGS − Vt)^2, as long as vds ≥ vGS−VT, where K is 1.16 milli-siemens per volt, and VT = 0.6 volts. The resistances R1 and R2 are 590 kilo-ohms and 100 kilo-ohms, respectively. What is the maximum value of RD for which the device is in saturation? Provide your answer in kilo-ohms. b. In the given circuit, assuming RD = 4 5 kilo-ohms, what is the maximum current iD that can flow through the device while ensuring the device remains in saturation? For this question, disregard the earlier values of R1 and R2.

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a. In the given circuit, the MOSFET operates based on the model i D = K ( v G S − V t ) 2 , as long as v d s ≥ v G S − V T , where K is 1.16 milli-siemens per volt, and V T = 0.6 volts. The resistances R 1 and R 2 are 590 kilo-ohms and 100 kilo-ohms, respectively. What is the maximum value of R D for which the device is in saturation? Provide your answer in kilo-ohms. b. In the given circuit, assuming R D = 4 5 kilo-ohms, what is the maximum current i D that can flow through the device while ensuring the device remains in saturation? For this question, disregard the earlier values of R 1 and R 2 .

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