Question

Notify Me Bookmark

A metal gate n-MOS transistor has ms = -0.7 V. If tox = 8 nm, Na = 1.2

A metal gate n-MOS transistor has ms = -0.7 V. If tox = 8 nm, Na = 1.2

Image text
A metal gate n-MOS transistor has ms = -0.7 V. If tox = 8 nm, Na = 1.2

Detailed Answer

1 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (1)

Similar/Related Questions

An n-channel MOSFET has the following parameters: μn = 450 cm2 V−1s−1, tox = 35 nm, Vth = 0.8 V, L = 2 μm, W = 30 μm (a) Calculate the unit-area gate capacitance Cox(εo = 8.85×10−14 F/cm and εox = 3.9 for SiO2) (b) Calculate the process transconductance parameter kn′ = μnCox (c) Calculate and plot ID versus VDS for 0 ≤ VDS ≤ 5 V and VGS = 0, 1, 2, 3, 4, and 5 V, respectively. Indicate on each curve the VDS( sat) point the corresponding ID (sat). . (d) Calculate and plot ID versus VGS for 0 ≤ VGS ≤ 5 V and VDS = 1.2 V. Indicate on the curve the transition points between the cutoff region, saturation region, and linear region. (e) Follow Example 3 in the PSPICE simulation tutorial and use PSPICE to simulate the ID−VDS and ID−VGS curves for the MOSFET above. Compare your simulation results with your calculation results in part (c) and (d). Note: In PSPICE, the statement for specifying a MOSFET is: Mname D G S B model_name L = value W = value .Model model_name NMOS(VTO = value KP = value ) where VTO is the threshold voltage Vth, and KP is the process transconductance parameter kn'.
Solution
0 0

The NMOS transistor in the circuit of fig. 1 is to be designed to operate as a resistor. Consider a process technology for which Lmin = 0.5 μm, tox = 10 nm, μn = 500 cm2 /V⋅s. The NMOS has Vtn = 0.8 V and kn = kn′(W/L) = 1.2 mA/V2. a) (04) Find Cox and kn. (ϵox = 3.45×10−11 F/m). Then, determine W for L = 1 um. b) (02) What should be the operating region of the transistor? Explain the reason. c) (14) Calculate VD and ID. Check the operating region of the nmos. d) (05) Calculate the effective resistance between drain and source at this operating point. Fig. 1.
Solution
0 0

Consider a Si-based enhancement-type n-channel MOSFET with the following parameters: Substrate doping concentration: NA = 3.15×1016 cm−3, channel length: L = 0.18 μm, gate width: W = 18 μm, electron mobility: μn = 900 cm2 /Vs; oxide thickness: tox = 8 nm, oxide dielectric constant = 3.9. Bandgap energy and Electron Affinity of the oxide are 9.0 eV and 1.0 eV, respectively. Work function of the gate metal is 4.977 eV. Assume no fixed surface state charge in the oxide or oxidesemiconductor interface. (a) Calculate the surface potential at strong inversion. (b) What is the work function of the semiconductor? (c) Calculate the Flatband voltage. (d) Calculate the threshold voltage. (e) What voltage do you need to apply at the drain (VDS) to pinch-off the channel when the Gate voltage (VGS) is 6 V? (f) Calculate the sheet electron concentration (ns) in the channel at the source end and the drain end at pinch-off. (g) Draw the band diagram of the MOSFET at zero gate bias. Mark all energy level values.
Solution
0 0